Oral presentation

[16p-Z26-1~15] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

Tue. Mar 16, 2021 1:30 PM - 5:30 PM Z26 (Z26)

Norifumi Fujimura(Osaka Pref. Univ.), Eisuke Tokumitsu(JAIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[16p-Z26-1] [Young Scientist Presentation Award Speech] Reliability characteristics of Ferroelectric-HfO2 capacitor with IGZO capping for non-volatile memory application

〇FEI MO¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

1:45 PM - 2:00 PM

▲ [16p-Z26-2] Comparative Study on Memory Characteristics of Ferroelectric-HfO₂ Transistors with Different Structure of Oxide-Semiconductor Channel

〇FEI MO¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.Institute of Industrial Science, the University of Tokyo)

2:00 PM - 2:15 PM

[16p-Z26-3] Experimental Demonstration of HfO₂-based Ferroelectric Transistor with MoS₂ Channel for High-Density and Low-Power Memory Application

〇(M2)Jiawen Xiang¹, Wenhsin Chang², Takuya Saraya¹, Toshifumi Irisawa², Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS,Univ. of Tokyo, 2.AIST)

2:15 PM - 2:30 PM

[16p-Z26-4] Trade-off Between Crystallization-Annealing Temperature and Si Interface Properties in HfO₂-based FeFETs

〇Kasidit Toprasertpong¹, Kento Tahara¹, Taichiro Fukui¹, Zaoyang Lin¹, Kouhei Watanabe¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

2:30 PM - 2:45 PM

△ [16p-Z26-5] Compatibility of thinning and low temperature process for ferroelectric Hf_0.5Zr_0.5O₂ films

〇Kento Tahara¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

2:45 PM - 3:00 PM

▼ [16p-Z26-6] A First-Principles Study on Ferroelectric Phase Formation of Si-Doped HfO₂

〇(P)Jixuan Wu¹, Fei Mo¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

3:00 PM - 3:15 PM

▼ [16p-Z26-7] Direct Evidence of Electric Field driven Phase Transformation in the Waking-up Process of Ferroelectric HfO₂ Characterized by Conventional X-ray Diffraction

〇(D)Siri Nittayakasetwat¹, Koji Kita¹ (1.Univ. of Tokyo)

3:15 PM - 3:30 PM

[16p-Z26-8] Changing of structural distortion and stabilization of ferroelectric phase in cap-annealed HfO₂ thin films characterized by in-plane and out-of-plane XRD

〇Haruki Momiyama¹, Siri Nittayakasetwat¹, Koji Kita¹ (1.Tokyo Univ.)

3:45 PM - 4:00 PM

[16p-Z26-9] Study of orthorhombic phase of low-temperature fabricated Hf_xZr_1−xO₂ thin films using synchrotron X-ray

〇Takashi Onaya^1,2,3,4, Toshihide Nabatame², Yong Chan Jung³, Heber Hernandez-Arriaga³, Jaidah Mohan³, Harrison S. Kim³, Naomi Sawamoto⁵, Chang-Yong Nam⁶, Esther H. R. Tsai⁶, Takahiro Nagata², Jiyoung Kim³, Atsushi Ogura^1,5 (1.Meiji Univ., 2.NIMS, 3.UT Dallas, 4.JSPS Research Fellow DC, 5.MREL, 6.Brookhaven National Lab.)

4:00 PM - 4:15 PM

[16p-Z26-10] Effect of Flash Lamp Annealing on the Ferroelectricity of Hf_xZr_1-xO₂ Thin Film

〇Kento Izumi¹, Hibiki Takahashi¹, Hikaru Kawarazaki², Hideaki tanimura², Shinichi kato², yasuo nara¹ (1.univ. of hyogo, 2.SCREEN semicon)

4:15 PM - 4:30 PM

[16p-Z26-11] Substrate dependence of crystalline phase of ZrO₂ thin film for high temperature deposition

〇Jotaro Nagano¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

4:30 PM - 4:45 PM

[16p-Z26-12] [Highlight]Nanoscale Mapping of Domain Switching Behavior in Ferroelectric Films

〇Yoshiomi Hiranaga¹, Takanori Mimura², Takao Shimizu², Hiroshi Funakubo², Yasuo Cho¹ (1.Tohoku Univ., 2.Tokyo Tech.)

4:45 PM - 5:00 PM

▼ [16p-Z26-13] Fabrication of ferroelectric gate thin film transistors using CSD Y-HZO and sputtered HZO with sputtered ITO channel

〇(DC)Mohit Mohit¹, Shinji Migita², Hiroyuki Ota², Yukinori Morita², Eisuke Tokumitsu¹ (1.JAIST, 2.AIST)

5:00 PM - 5:15 PM

[16p-Z26-14] Preparation of (Hf,Zr)O₂ thin films on transparent oxide electrode

〇Junpei Ouchi¹, Hironori Fujisawa¹, Seiji Nakashima¹ (1.Univ.Hyogo)

5:15 PM - 5:30 PM

[16p-Z26-15] Physical properties of mist CVD-derived HZO films dependent on post deposition annealing by RTA

〇(M1)Yuki Fujiwara¹, Onishi Junya¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

Sessions

CS Code-sharing session » 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[16p-Z26-1~15] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

[16p-Z26-1] [Young Scientist Presentation Award Speech] Reliability characteristics of Ferroelectric-HfO2 capacitor with IGZO capping for non-volatile memory application

▲ [16p-Z26-2] Comparative Study on Memory Characteristics of Ferroelectric-HfO₂ Transistors with Different Structure of Oxide-Semiconductor Channel

[16p-Z26-3] Experimental Demonstration of HfO₂-based Ferroelectric Transistor with MoS₂ Channel for High-Density and Low-Power Memory Application

[16p-Z26-4] Trade-off Between Crystallization-Annealing Temperature and Si Interface Properties in HfO₂-based FeFETs

△ [16p-Z26-5] Compatibility of thinning and low temperature process for ferroelectric Hf_0.5Zr_0.5O₂ films

▼ [16p-Z26-6] A First-Principles Study on Ferroelectric Phase Formation of Si-Doped HfO₂

▼ [16p-Z26-7] Direct Evidence of Electric Field driven Phase Transformation in the Waking-up Process of Ferroelectric HfO₂ Characterized by Conventional X-ray Diffraction

[16p-Z26-8] Changing of structural distortion and stabilization of ferroelectric phase in cap-annealed HfO₂ thin films characterized by in-plane and out-of-plane XRD

[16p-Z26-9] Study of orthorhombic phase of low-temperature fabricated Hf_xZr_1−xO₂ thin films using synchrotron X-ray

[16p-Z26-10] Effect of Flash Lamp Annealing on the Ferroelectricity of Hf_xZr_1-xO₂ Thin Film

[16p-Z26-11] Substrate dependence of crystalline phase of ZrO₂ thin film for high temperature deposition

[16p-Z26-12] [Highlight]Nanoscale Mapping of Domain Switching Behavior in Ferroelectric Films

▼ [16p-Z26-13] Fabrication of ferroelectric gate thin film transistors using CSD Y-HZO and sputtered HZO with sputtered ITO channel

[16p-Z26-14] Preparation of (Hf,Zr)O₂ thin films on transparent oxide electrode

[16p-Z26-15] Physical properties of mist CVD-derived HZO films dependent on post deposition annealing by RTA

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Sessions

CS Code-sharing session » 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[16p-Z26-1~15] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

▲ [16p-Z26-2] Comparative Study on Memory Characteristics of Ferroelectric-HfO2 Transistors with Different Structure of Oxide-Semiconductor Channel

△ [16p-Z26-5] Compatibility of thinning and low temperature process for ferroelectric Hf0.5Zr0.5O2 films

▼ [16p-Z26-6] A First-Principles Study on Ferroelectric Phase Formation of Si-Doped HfO2

▼ [16p-Z26-7] Direct Evidence of Electric Field driven Phase Transformation in the Waking-up Process of Ferroelectric HfO2 Characterized by Conventional X-ray Diffraction

▼ [16p-Z26-13] Fabrication of ferroelectric gate thin film transistors using CSD Y-HZO and sputtered HZO with sputtered ITO channel

Authenticate

▲ [16p-Z26-2] Comparative Study on Memory Characteristics of Ferroelectric-HfO₂ Transistors with Different Structure of Oxide-Semiconductor Channel

△ [16p-Z26-5] Compatibility of thinning and low temperature process for ferroelectric Hf_0.5Zr_0.5O₂ films

▼ [16p-Z26-6] A First-Principles Study on Ferroelectric Phase Formation of Si-Doped HfO₂

▼ [16p-Z26-7] Direct Evidence of Electric Field driven Phase Transformation in the Waking-up Process of Ferroelectric HfO₂ Characterized by Conventional X-ray Diffraction