[16a-Z16-1~11] 13.7 Compound and power electron devices and process technology

[16a-Z16-11] Accurate estimation of MOS itenrface fixed charge density based on UPS analysis of electric structure of β-Ga₂O₃

〇Daiki Takeda¹, Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:Ga2O3, interface fixed charge density, electric structure

The depth from the vacuum level to the valence band top of β-Ga₂O₃(001) was estimated to be 8.2 eV and the work function of Au was estimated to be 4.8 eV by UPS measurement.The ionization potential of β-Ga₂O₃(001) was calculated to be 3.5~3.6 eV with a band gap of 4.7~4.8 eV and a carrier concentration of 6×10¹⁵$cm^-3.The interface fixed charge density of the fabricated Au/SiO₂/β-Ga₂O₃(001) MOS capacitor was evaluated using the ionization potential of β-Ga₂O₃(001) and the work function of Au estimated by UPS measurement, and the positive fixed charge was suppressed to <1.5×10¹¹cm^-2.