[16a-Z16-1~11] 13.7 Compound and power electron devices and process technology

[16a-Z16-3] Dependence of Shcottky barrier height on metal work function for n-type AlN

〇Masanobu Hiroki¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:AlN, Schottky barrier height

We invesigated the metal work function dependence of Schottky barrier height (SBH) for n-type AlN. SBH was estimated from C-V characteristics of n-type AlN Schottky barrier diodes (SBDs) with Ti, Ni, Pd and Pd anode electrodes. SBH increased with increasing metal work function, Φ_m and has the relationship, SBH = q(1.1Φ_m - 2.26). The absence of felmi level pinning indicates the small density of interface state at the interface between metals and n-type AlN.