2021年第68回応用物理学会春季学術講演会

講演情報

一般セッション(ポスター講演)

15 結晶工学 » 15.4 III-V族窒化物結晶

[16p-P01-1~16] 15.4 III-V族窒化物結晶

2021年3月16日(火) 13:00 〜 13:50 P01 (ポスター)

13:00 〜 13:50

[16p-P01-10] Effect of strain of template on current injection efficiency for AlGaN-based deep-ultraviolet light-emitting diodes

GUODONG HAO1、Shin-ichiro Inoue1 (1.NICT)

キーワード:AlGaN DUV-LED, Template Strain, Current injection efficiency

AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) have attracted an increasing attention as an effective method for disinfection and sterilization, especially to kill the coronavirus (COVID-19). However, the wall-plug efficiency (WPE) of DUV-LEDs is still very low (< 8%). The low current injection efficiency (CIE) is one factor that limits the WPE of AlGaN-based DUV-LEDs under electrical injection.1 It is well known that the strain plays a crucial role in the performance of the DUV-LEDs. A number of studies focused on strain effects on the radiative recombination efficiency due to the quantum-confined Stark effect (QCSE) of the quantum wells (QWs). The strain effects on the light extraction efficiency via the modulation of the photon polarization have also been investigated extensively. In this talk, we report a theoretical simulation of the CIE dependence on strain of AlN template in AlGaN-based DUV-LEDs.