[16p-P01-1~16] 15.4 III-V-group nitride crystals

[16p-P01-3] Growth of hexagonal boron nitride thin films on c-plane sapphire substrates by low pressure chemical vapor deposition using a cold-wall CVD-reactor

〇Taira Watanabe¹, Kazuki Matsushita¹, Yuki Tanaka¹, Riku Yoshioka¹, Katsumi Masuda¹, Hiroko Kominami¹, Kazuhiko Hara^2,3 (1.GSIST Shizuoka Univ., 2.GSST Shizuoka Univ., 3.RIE Shizuoka Univ.)

Keywords:hexagonal born nitride, chemical vapor deposition, sapphire substrate

Hexagonal boron nitride (h-BN) is a group III-V material that is expected to be applied to deep ultraviolet light emitting devices. In this study, we attempted to grow an h-BN thin film on a c-plane sapphire substrate using a cold wall reactor. BCl₃ and NH₃ were used as raw material gases, and samples were prepared with a substrate temperature in the range of 1000 to 1500 ^°C. Compared with the sample grown in a hot wall reactor, the sample grown with the new reactor had finer grains, and the exciton emission intensity with respect to the defect emission intensity was also improved.