[17a-Z10-1~10] 3.15 Silicon photonics and integrated photonics

[17a-Z10-5] Study on High-Speed Photoresponsivity for Waveguide-Type Ge Photodetector with Lateral PIN Junction (II)

〇Junichi Fujikata¹, Hideki Ono¹, Takahiro Nakamura¹ (1.PETRA)

Keywords:silicon photonics, Ge photodetector

We studied high-speed waveguide-type Ge photodetector with a lateral PIN junction. 60GHz bandwidth was demonstrated with doping the phosphorus to the facet region of the Ge mesa in the case of 0dBm input optical power in the O band wavelengths.