2021年第68回応用物理学会春季学術講演会

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一般セッション(口頭講演)

9 応用物性 » 9.4 熱電変換

[17a-Z17-1~11] 9.4 熱電変換

2021年3月17日(水) 09:00 〜 12:00 Z17 (Z17)

宮崎 康次(九工大)、石部 貴史(阪大)

09:00 〜 09:15

[17a-Z17-1] Effect of various inorganic films on the growth of CsSnI3 crystal towards thermoelectric
applications

Ajay Kumar Baranwal1、Daisuke Hirotani1、Shrikant Saini2、Tomohide Yabuki2、Qing Shen2、Koji Miyazaki2、Shuzi Hayase1 (1.Univ. Electro-Comm.、2.Kyushu Inst. Techn.)

キーワード:CsSnI3 thermoelectric film, CsSnI3 nanocomposite

Halide perovskites have found potentially inexpensive fabrication technology with ultralow thermal conductivity. Among them, inorganic tin halide perovskite (CsSnI3) developed as a potential thermoelectric film in recent past years owing to high electrical conductivity and decent Seebeck coefficient. Their electronic properties are determined from corner sharing flexible SnI6 octahedra. Here in, solution processed CsSnI3 crystal growth are observed in presence of various porous scaffolds TiO2, Al2O3 and ZrO2 for thermoelectric purposes.
The equimolar mixture of (CsI+SnI2) precursor solution was spin coated over the inorganic porous layer followed with baking at moderate low temperature 130 ℃ to grow the crystal in nanocomposite CsSnI3/TiO2, CsSnI3/Al2O3 and, CsSnI3/ZrO2.
X-ray diffraction (XRD) pattern of grown CsSnI3 crystal over the mesoporous films TiO2, Al2O3, and ZrO2 show a dominant shift. This shift in bragg peak shows the interaction among perovskite ink and inorganic nanoparticles of porous film. The resulting thermoelectric performance evaluation and characterizations would be discussed in detail in the conference.