[17a-Z26-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[17a-Z26-4] Design of ULVR-SRAM cell for near-threshold voltage operation

〇Takumi Hara¹, Hayato Yoshida¹, Yusaku Shiotsu¹, Shuu'ichirou Yamamoto¹, Satoshi Sugahara¹ (1.FIRST,Tokyo inst. of Tech.)

Keywords:Power-gating, SRAM, Low static power