[17p-P06-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17p-P06-6] Repeated bending durability characterization of oxide thin films formed on flexible substrates and structural analysis by X-ray diffraction measurements

〇(D)Kazuyori Oura¹, Toshihiro Kumatani¹, Hideo Wada¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech.)

Keywords:flexible device, ZnO, COP

The application of flexible devices is expected in various fields toward the realization of the IoT society. In particular, the use of oxide semiconductors has advantages such as high electron mobility and transparency, and it is possible to form a film at room temperature. We used Al-doped ZnO (AZO) and evaluated the bending durability by observing the surface condition during repeated bending and performing a 2-terminal resistance measurement. This time, the state of the thin film after repeated bending was structurally analyzed, and the results are reported.