Investigation of N<sub>2</sub> annealing condition towards high-performance p-type SnO TFTs

Kotaro Watanabe; Shinya Aikawa

Presentation information

Poster presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17p-P06-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 17, 2021 3:00 PM - 3:50 PM P06 (Poster)

3:00 PM - 3:50 PM

[17p-P06-8] Investigation of N₂ annealing condition towards high-performance p-type SnO TFTs

〇(B)Kotaro Watanabe¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:semiconductor

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Presentation information

[17p-P06-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17p-P06-8] Investigation of N2 annealing condition towards high-performance p-type SnO TFTs

[17p-P06-8] Investigation of N₂ annealing condition towards high-performance p-type SnO TFTs