[17p-Z26-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[17p-Z26-13] Physical Properties of Next Generation Interconnect Material CuAl₂

〇TOSHIHIRO KUGE^1,2, LINGHAN CHEN¹, MASATAKA YAHAGI^1,2, JUNICHI KOIKE¹ (1.Tohoku Univ., 2.JX Nippon Mining & Metals Corp.)

Keywords:semiconductor, Next Generation Interconnect Material

Because of aggressive downscaling of ULSI, the resistance-capacitance delay of Cu interconnects has become a serious problem. In Cu interconnects, Ta has been used as a liner layer and TaN as a barrier layer, but it is preferable not to require either layer. Recently, intermetallic compounds such as NiAl, Cu₂Mg, and CuAl₂ have been reported as candidates for next generation liner- and barrier-free materials. In this presentation, we will report our research on the wettability and diffusion inhibition of CuAl₂.