[18a-P04-1~14] 10 Spintronics and Magnetics(Poster)

[18a-P04-9] Voltage-control of magnetization reversal based on magnetic anisotropy originating from interfacial Dirac electrons

〇Takahiro Chiba¹, Takashi Komine² (1.NIT-Fukushima Col., 2.Ibaraki Univ.)

Keywords:topological insulator, voltage-control of magnetic anisotropy, spin-orbit torque

Here, based on voltage-control of magnetic anisotropy, we present a switching method of the magnetization in topological insulator based magnetic heterostructures. We further propose a transistor-like device with the functionality of a nonvolatile spin memory adopting the presented writhing method that requires no external magnetic field. For the magnetization reversal at low temperatures, the estimated current density and gate voltage are the orders of 10⁴ A/cm² and 0.1V, respectively, which are much smaller than those of current spintronic devices.