[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[18a-Z05-2] Influence of steps in the surface on Contraction of Basal Plane Partial Dislocations in 4H-SiC

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

Keywords:SiC, dislocation, molecular dynamics simulation

BPDs in 4H-SiC are converted into TEDs to reduce BPDs (BPD-TED conversion) by using the step-controlled epitaxy on a small-offcut angle (0001) substrate. This mechanism has not yet been clarified due to its complex process. Since one ends of BPDs appear on the surface, steps formed on the surface affect the contraction of them. In this work, we performed the reaction pathway analysis to investigate the effect of the steps. As a result, it was found that contractions depend on the directions of the burgers vectors.