[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [18a-Z05-3] Depth estimation of basal plane dislocations in SiC by synchrotron X-ray topography

〇Fumihiro Fujie¹, Hongyu Peng², Tuerxun Ailihumaer², Balaji Raghothamachar², Michael Dudley², Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,3 (1.Nagoya Univ., 2.Stony Brook Univ., 3.AIST GaN-OIL)

Keywords:synchrotron X-ray topography, silicon carbide, basal plane dislocation

The contrast of basal plane dislocations (BPDs) in synchrotron X-ray topography images of SiC was investigated experimentally and by simulation, and the mechanism of the change in contrast with the change in the depth of BPDs from the crystal surface was clarified. Since the depth of BPDs has been reported to strongly affect the stress current density at which at which the expansion of stacking faults occurs, and hence determining the depths can provide critical details for suppression of the stacking faults expansion.