[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [18a-Z05-4] Study of Adsorption of H on Stepped SiC Surface during CVD using HCl

〇Tomoya Kimura¹, Kenta Chokawa², Atsushi Oshiyama², Kenji Shiraishi^2,1 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:silicon carbide, chemical vapor deposition, first-principles calculation