[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [18a-Z05-5] Study on high concentration of boron and nitrogen co-doping in 4H-SiC by closed sublimation growth

〇Yoma Yamane¹, Lu Weifang¹, Kosuke Yanai¹, Satosi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research center)

Keywords:semiconductor, SiC, fluorescent SiC