[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[18a-Z05-7] Crystallinity and contact resistance of n-type 4H-SiC formed by thin-film laser doping with KrF excimer laser

〇Takuma Yasunami¹, Toshihumi kikuchi^2,3, Kaname imokawa³, Daisuke Nakamura², Hiroshi Ikenoue^2,3 (1.Kyushu Univ., 2.ISEE. Kyushu Univ., 3.Gigaphoton Next GLP)

Keywords:4H-SiC, laser doping, KrF excimer laser