The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-Z33-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z33 (Z33)

Yamada Naoomi(Chubu Univ.), Magari Yusaku(Simane Univ.)

9:00 AM - 9:15 AM

[18a-Z33-1] Transformation from degenerate to non-degenerate Sn-doped In2O3 films by postirradaition of O- ions

Yutaka Furubayashi1, Makoto Maehara2, Toshiyuki Sakemi2, Hisashi Kitami1,2, Tetsuya Yamamoto1 (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industr. ltd.)

Keywords:Indium oxide, post-irradiation of negatively-charged oxygen ions, optical properties

Sn-doped In2O3 (ITO) is mainly applied to transparent conducting oxides. In this study, we successfully demonstrated that the carrier concentration of ITO filmes irradiated by negatively-charged oxygen ions became very low, where it showed non-degenerate semiconducting properties which are quite different from those of non-irradiated ITO ones.