[18a-Z33-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-Z33-9] Schottky barrier diode using ultra-wide bandgap amorphous oxide semiconductor, a-Ga-O

〇Keisuke Ide¹, Yurika Kasai¹, Takayoshi Katase¹, Hidenori Hiramatsu^1,2, Hideo Hosono², Toshio Kamiya^1,2 (1.MSL, Tokyo Tech., 2.MCES, Tokyo Tech.)

Keywords:amorphous oxide semiconductor