[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

[18p-Z05-13] MOS structure fabrication on 4H-SiC surface after high temperature N₂ + H₂ annealing

〇Toshihiro Saga¹, Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:SiC MOSFET, nitrogen, hydrogen

In high-temperature N₂+H₂ annealing of 4H-SiC surfaces, the nitrogen incorporation rate into the substrate surface and the surface roughness were investigated by changing the annealing conditions such as temperature, time, and hydrogen partial pressure. The CV characteristics of the fabricated MOS capacitors showed that the frequency dispersion was suppressed and the interface state density (Dit) was about 4×10¹¹cm^-2eV^-1. It showed that high-temperature N₂+H₂ annealing before oxide film deposition could be effective for fabricating SiC-MOSFET.