[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

[18p-Z05-3] Visualization of transient variation of internal temperature distribution during SiC-MOSFET operating using Optical-Interference Contactless Thermometer (OICT)

〇Keiya Fujimoto¹, Koyanagi Tatsuki¹, Takuma Sato¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Science and Engineering,Hiroshima Univ.)

Keywords:OICT, SiC

Thermal design is indispensable for device fabrication, and although heat conduction is analyzed by various models, it is not possible to directly measure the exothermic process inside the device. In this study, we attempted to visualize the internal heat diffusion process during the operation of SiC-MOSFET by applying the Optical-Interference Contactless Thermometer (OICT) we developed.