The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[18p-Z15-1~15] 6.4 Thin films and New materials

Thu. Mar 18, 2021 1:30 PM - 5:30 PM Z15 (Z15)

Tetsuo Tsuchiya(AIST), Hiroaki Nishikawa(Kindai Univ.)

2:30 PM - 2:45 PM

[18p-Z15-5] Free-exciton emission in heteroepitaxially-grown CuI single-crystalline films

〇(M2)Sotaro Inagaki1, Masao Nakamura2, Yoshihiro Okamura1, Makiko Ogino1, Yotaro Takahashi1,2, Licong Peng2, Xiuzhen Yu2, Yoshinori Tokura1,2,3, Masashi Kawasaki1,2 (1.Univ. of Tokyo, 2.RIKEN-CEMS, 3.Tokyo College)

Keywords:wide gap semiconductor, crystallinity, exciton

CuI is a wide-bandgap semiconductor of superior excitonic properties. However, there has been no report demonstrating a fabrication of single-crystalline films. In this study, we employed InAs as a substrate with a good lattice matching with CuI. We could successfully grow single-crystalline films with high lattice coherence exceeding that in bulk single crystals and atomically-flat surfaces. Photoluminescence spectra exhibit quite sharp free-exciton emission, owing to the dramatic suppression of defect density.