[18p-Z33-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-Z33-15] In-plane orientation control of (001) κ-Ga₂O₃ by epitaxial lateral overgrowth through a geometrical natural selection mechanism

〇Yuichi Oshima¹, Katsuaki Kawara², Takayoshi Oshima², Takashi Shinohe² (1.NIMS, 2.FLOSFIA)

Keywords:Ga2O3, Epitaxial lateral overgrowth

Epitaxial lateral over growth technique was applied to a heteroepitaxial κ-Ga₂O₃ film which was composed of in-plane 120^o rotational nano-domains. When a stripe-patterned mask was parallel to the [11-20] direction of the sapphire substrate, the three in-plane orientations of the κ-Ga₂O₃ domains converged into one whose [010] direction was perpendicular to the stripe through a geometrical natural selection mechanism