The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-Z33-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 18, 2021 1:00 PM - 6:00 PM Z33 (Z33)

Tetsuya Yamamoto(Kochi Univ. of Tech.), Keisuke Ide(Tokyo Tech), Kohei SHIMA(Tohoku Univ.)

1:30 PM - 1:45 PM

[18p-Z33-2] Effect of the thickness on the Properties of ZnO films synthesized
by mist chemical vapor deposition method

〇(D)Wai HtetSu, Chaoyang Li

Keywords:Mist chemical deposition method, transmittance

[Introduction] Zinc oxide thin film has an excellent optical and structural properties with wide band gap of 3.37 eV. I In this research, we focused on the synthesizing of ZnO thin film using low cost mist CVD method, the structural and photocatalytic properties will be investigated.
[Results and Discussion] Figure 1 shows the SEM images of ZnO films with different thickness deposited by mist CVD method. It can be clearly observed that all surfaces of ZnO films are wedge-like structures of ZnO nanosheets with good uniformity. The average grain size is increased from 100 to 200 nm with the thickness of ZnO films increasing from 300 to 750 nm. The XRD patterns of ZnO thin films showed the only dominated (002) peak for all of films which is corresponding to preferred c-axis orientation growth during mist CVD process. The 750 nm-thick ZnO film exhibits the highest (002) peak intensity and sharpest full width at half maximum. The transmission spectra of ZnO films with different thickness deposited by mist CVD method is shown in Fig.2. The transmission spectra of ZnO films from 300-600nm was higher than 70% in visible region then decreased to 60% in 750 nm-thick ZnO film.
As a summary, the crystallinity of ZnO films was improved while average grain size increased and the transmittance decreased as the ZnO films thickness increased.