Chemical trends of <em>n</em>-type doping of Al, Ga, In, and Ti donors for magnetron-sputtered ZnO polycrystalline films

Junichi Nomoto; Hisao Makino; Tetsuo Tsuchiya; Tetsuya Yamamoto

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-Z33-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 18, 2021 1:00 PM - 6:00 PM Z33 (Z33)

Tetsuya Yamamoto(Kochi Univ. of Tech.), Keisuke Ide(Tokyo Tech), Kohei SHIMA(Tohoku Univ.)

3:00 PM - 3:15 PM

[18p-Z33-7] Chemical trends of n-type doping of Al, Ga, In, and Ti donors for magnetron-sputtered ZnO polycrystalline films

〇Junichi Nomoto¹, Hisao Makino², Tetsuo Tsuchiya¹, Tetsuya Yamamoto² (1.Advanced Coating Technology Research Center, AIST, 2.Research Inst. Kochi Univ. Tech.)

Keywords:Transparent conductive film, Dopant, Sputtering

本研究では、各種ドーパント： Al、Ga、In、及び Ti を添加した ZnO (AZO、GZO、IZO、及び TZO) バルク層の配向秩序を、直流アークプラズマを用いる反応性プラズマ蒸着法により形成した極薄膜 ZnO 層により制御し、各種特性に対するドーパント効果を詳細に検討した。[J. Nomoto et al., J. Appl. Phys. 128 (2020) 145303.]