Board-band Terahertz Birefringence of Fe-doped Gallium Oxide (Ga<sub>2</sub>O<sub>3</sub>)

Ke Wang; Hao Jiang; Chen Gong; Hironaru Murakami; Masayoshi Tonouchi

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Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 9:00 AM - 12:15 PM Z33 (Z33)

Kazuyuki Uno(Wakayama Univ.), Oshima Yuichi(NIMS)

9:00 AM - 9:15 AM

▲ [19a-Z33-1] Board-band Terahertz Birefringence of Fe-doped Gallium Oxide (Ga₂O₃)

〇(M1)Ke Wang¹, Hao Jiang¹, Chen Gong¹, Hironaru Murakami¹, Masayoshi Tonouchi¹ (1.Osaka Univ.)

Keywords:Terahertz, Gallium Oxide

This presentation is mainly about birefringence an board-band physical properties of gallium oxide(Fe-doped, 010 orientation) in THz range.

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Presentation information

[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [19a-Z33-1] Board-band Terahertz Birefringence of Fe-doped Gallium Oxide (Ga2O3)

▲ [19a-Z33-1] Board-band Terahertz Birefringence of Fe-doped Gallium Oxide (Ga₂O₃)