The 68th JSAP Spring Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 9:00 AM - 12:15 PM Z33 (Z33)

Kazuyuki Uno(Wakayama Univ.), Oshima Yuichi(NIMS)

9:15 AM - 9:30 AM

[19a-Z33-2] Electrical Characterization of Si-Doped β-Ga2O3 (010) Single Crystals Annealed at High Temperatures

〇Yoshitaka Nakano1, Akira Toyotome1, Riku Suzuki1, Yuki Yasuda1 (1.Chubu Univ.)

Keywords:Ga2O3, deep-level defects, annealing

We have electrically characterized Si-doped β-Ga2O3(010) single crystals annealed at high temperatures in vacuum and/or oxygen ambiences, employing capacitance-voltage, steady-state photo-capacitance spectroscopy, and variable temperture photoluminescence techniques.