The 68th JSAP Spring Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 9:00 AM - 12:15 PM Z33 (Z33)

Kazuyuki Uno(Wakayama Univ.), Oshima Yuichi(NIMS)

10:00 AM - 10:15 AM

[19a-Z33-5] Fragile (010) surface of β-Ga2O3

〇Hirotaka Yamaguchi1, Shinya Watanabe2, Yu Yamaoka2, Kimiyoshi Koshi2, Akito Kuramata2 (1.AIST, 2.Novel Crystal Tech.)

Keywords:Ga2O3, cleavage, Vickers hardness

In β-Ga2O3 (010)-oriented substrate, machined processes induce significant damage compared with in the (-201) and (001)-oriented ones. In this study, mechanical fragility was examined by using Vickers hardness (HV) measurements. Compared with the (-201) and (001)-oriented substrates, the (010)-oriented substrate exhibited smaller HV value and large cracks due to the (100) and (001) cleavages around the indentation.