The 68th JSAP Spring Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 9:00 AM - 12:15 PM Z33 (Z33)

Kazuyuki Uno(Wakayama Univ.), Oshima Yuichi(NIMS)

11:15 AM - 11:30 AM

△ [19a-Z33-9] Effect of excess Cl2 supply on HVPE growth of β-Ga2O3 by GaCl-O2 system

〇Akane Mori1, Yuya Saimoto1, Ken Goto1, Yoshinao Kumagai1 (1.Tokyo Univ. Agric. and Tech.)

Keywords:HVPE, Ga2O3, GaCl3

In halide vapor phase epitaxy of β-Ga2O3 by GaCl-O2 system, powder formation of Ga2O3 in the vapor phase hinders epitaxial growth, since the change of the Gibbs energy of formation is very learge. In this study, effect of excess chlorin supply on the powder formation is investigated.