[19p-P06-1~9] 13.7 Compound and power electron devices and process technology

▲ [19p-P06-8] Comparison of side-gate modulation responses for AlGaN/GaN HEMTs on GaN substrates with and without C-doped GaN buffer layer

〇(P)Maria Villamin¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

Keywords:GaN, HEMT, buffer layer

Side-gate modulation of AlGaN/GaN HEMTs on GaN substrates with and without C-doped GaN buffer layer were investigated. Two HEMTs with identical device structure were fabricated from two separate wafers: with C-doped GaN buffer and without buffer layer. Both HEMT wafers were grown using metal organic chemical vapor deposition on GaN substrate. SG modulation was done by sweeping SG voltage while monitoring ID, and while the drain-to-source voltage was kept at 6 V, and the gate voltage was biased at 0 V (on state). Results show that C-doped GaN buffer HEMT has hysteresis feature, which is consistent with our previously reported SG measurement of C-doped GaN buffer HEMT. Moreover, no-buffer HEMT shows larger SG modulation as compared to the with-buffer HEMT. It can be concluded that no-buffer HEMT is less stable to SG modulation as compared to HEMT with buffer layer.