5:15 PM - 5:30 PM
▲ [19p-Z18-14] Scalable, Hybrid Complementary Integrated Circuits Based on Solution-Processed Organic and Oxide Thin-Film Transistors
Keywords:Semiconductor, Hybrid, Integrated circuits
Printing electronics has been of considerable interest in recent years, since it offers a cost-efficient way to realize electronic applications, especially flexible devices. However, printing complementary circuits is still under way due to the lack of suitable material systems: high-performance solution-processable p- and n-type semiconductors of the same kind of material. This work reports a hybrid system, which combines the strengths of organic semiconductors (OSCs) and amorphous metal-oxide semiconductors (MOSs), to print high-performance integrated circuits (ICs) on flexible substrates.
This research demonstrates an integration technology for hybrid complementary circuits towards scalable fabrication and high-speed operation. Employing high performance semiconductor materials: 3,11-dinonylldinaphto[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene (C9-DNBDT-NW) single crystal as p-channel material and amorphous indium-zinc-oxide (IZO) as n-channel material, designing damage-free patterning processes for OSC- and IZO-based TFTs, and improving process durability of IZO-based TFTs allow the successfully fabrication of hybrid complementary circuits. The as-fabricated hybrid complementary inverters worked well at the ambient conditions, exhibited large noise margin, negligible hysteresis and power gain of 38 V/V at supply voltage of 7 V. Significantly, the hybrid inverters exhibited good long-term stability, working perfectly after exposure to air for 5 months. Besides, a good flexibility was demonstrated by a bending test. A 5-stage ring oscillator owning a propagation delay of 1.3 µs per stage was demonstrated, which is the fastest operation ever reported for flexible complementary inverter based on solution-processed MOSs or OSCs to our knowledge. The results indicate the possibility to print high-speed complementary circuits on flexible substrates directly.
This research demonstrates an integration technology for hybrid complementary circuits towards scalable fabrication and high-speed operation. Employing high performance semiconductor materials: 3,11-dinonylldinaphto[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene (C9-DNBDT-NW) single crystal as p-channel material and amorphous indium-zinc-oxide (IZO) as n-channel material, designing damage-free patterning processes for OSC- and IZO-based TFTs, and improving process durability of IZO-based TFTs allow the successfully fabrication of hybrid complementary circuits. The as-fabricated hybrid complementary inverters worked well at the ambient conditions, exhibited large noise margin, negligible hysteresis and power gain of 38 V/V at supply voltage of 7 V. Significantly, the hybrid inverters exhibited good long-term stability, working perfectly after exposure to air for 5 months. Besides, a good flexibility was demonstrated by a bending test. A 5-stage ring oscillator owning a propagation delay of 1.3 µs per stage was demonstrated, which is the fastest operation ever reported for flexible complementary inverter based on solution-processed MOSs or OSCs to our knowledge. The results indicate the possibility to print high-speed complementary circuits on flexible substrates directly.