[19p-Z22-1~16] 3.13 Semiconductor optical devices

△ [19p-Z22-8] Characterization of E-band InAs/InGaAs quantum dot lasers on metamorphic buffer layer

〇(B)Takaya Imoto^1,2, Jinkwan Kwoen¹, Yasuhiko Arakawa¹ (1.NanoQuine, Univ.Tokyo, 2.Tokyo Science Univ.)

Keywords:Quantum dot lasers, Metamorphic, Quantum dots

In recent years, in addition to the O-band (1260-1360 nm) and C-band (1530-1565 nm), E-band (1360-1460 nm) and S-band (1460-1530 nm) have also attracted attention due to the development of low OH content optical fibers and coarse wavelength division multiplex (CWDM).However, semiconductor lasers with suitable characteristics have not been developed in the E-band.Although, InAs/GaAs quantum dot lasers have good properties such as high efficiency and outstanding temperature characteristics, their high performance has been demonstrated in bands of 1.3 μm or less.For further long wavelengths, methods for controlling the crystal lattice constants of substrates such as growth of metamorphic layers are currently being attempted.We grow InGaAs metamorphic layers containing strained superlattice layers and realized an E-band laser using InAs quantum dots.In addition, the effectiveness of the multifunctional InAlGaAs metamorphic buffer layer serving as lattice constant expansion, laser cladding, and dislocation filtering by laser oscillation was also verified.