[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

[19p-Z25-12] Residual stress characterization of GaN/Diamond bonding interface by Raman spectroscopy

〇Ayaka Kobayashi¹, Yasuo Shimizu², Yutaka Ohno², Seong-Woo Kim³, Koji Koyama³, Makoto Kasu⁴, Naoteru Shigekawa¹, Jianbo Liang¹ (1.OsakaCity Univ., 2.IMR Tohoku Univ., 3.AdamantNamikiPrecisionJewel Co.,Ltd., 4.Saga Univ.)

Keywords:GaN