The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

Fri. Mar 19, 2021 1:00 PM - 4:45 PM Z25 (Z25)

Masashi Kato(Nagoya Inst. of Tech.)

1:30 PM - 1:45 PM

[19p-Z25-3] Fabrication of recessed-gate AlGaN/GaN HEMTs utilizing contactless photoelectrochemical (CL-PEC) etching (2)

〇(DC)Masachika Toguchi1, Kazuki Miwa1, Fumimasa Horikiri2, Noboru Fukuhara2, Yoshinobu Narita2, Osamu Ichikawa2, Ryota Isono2, Takeshi Tanaka2, Taketomo Sato1 (1.RCIQE, Hokkaido Univ., 2.SCIOCS Co. Ltd.)

Keywords:Photoelectrochemical, Etching, Nitride Semiconductor