The 68th JSAP Spring Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 1:30 PM - 6:00 PM Z33 (Z33)

Yasuaki Ishikawa(Aoyama Gakuin Univ.), Kohei Fujiwara(Tohoku Univ.), Akifumi Matsuda(Tokyo Tech)

4:45 PM - 5:00 PM

△ [19p-Z33-12] Oxygen vacancy formation around Sn in p-type semiconducting Sn-Nb complex oxides

〇Akane Samizo1, Naoto Kikuchi2, Makoto Miinohara2, Kyoko Bando2, Yoshihiro Aiura2, Ko Mibu3, Keishi Nishio1 (1.Tokyo Univ. Sci., 2.AIST, 3.Nagoya Inst. Tech.)

Keywords:p-type oxides, oxygen vacancy formations, crystal structure