Fabrication of bilayer oxide thin-film-transistors by a solution process and dependence of sintering atmosphere and film thickness of AZO buffer layers

Kazuyori Oura; Hideo Wada; Masatoshi Koyama; Toshihiko Maemoto; Shigehiko Sasa

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 1:30 PM - 6:00 PM Z33 (Z33)

Yasuaki Ishikawa(Aoyama Gakuin Univ.), Kohei Fujiwara(Tohoku Univ.), Akifumi Matsuda(Tokyo Tech)

2:00 PM - 2:15 PM

△ [19p-Z33-3] Fabrication of bilayer oxide thin-film-transistors by a solution process and dependence of sintering atmosphere and film thickness of AZO buffer layers

〇(D)Kazuyori Oura¹, Hideo Wada¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech.)

Keywords:solution process, ZnO, bilayer TFT

In recent years, there has been a research report on a thin film transistor (TFT) in which different oxide semiconductors are laminated, and it is expected that the carrier mobility and the driving ability and stability of the TFT will be improved by adopting a laminated structure. We succeeded in improving the characteristics by bilayer structure of a ZnO or AZO channel layer and an AZO buffer layer with high Al incorporation. This time, we evaluated the effect of the sintering atmosphere and film thickness of the high-resistance AZO buffer layer on the TFT and report the results.