Origin of high mobility in W-doped SnO<sub>2</sub> thin films

Michitaka Fukumoto; Yasushi Hirose; Shoichiro Nakao; Koji Kimura; Koichi Hayashi; Yuki Sugisawa; Daiichiro Sekiba; Tetsuya Hasegawa

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 1:30 PM - 6:00 PM Z33 (Z33)

Yasuaki Ishikawa(Aoyama Gakuin Univ.), Kohei Fujiwara(Tohoku Univ.), Akifumi Matsuda(Tokyo Tech)

3:30 PM - 3:45 PM

△ [19p-Z33-8] Origin of high mobility in W-doped SnO₂ thin films

〇Michitaka Fukumoto¹, Yasushi Hirose¹, Shoichiro Nakao¹, Koji Kimura², Koichi Hayashi², Yuki Sugisawa³, Daiichiro Sekiba³, Tetsuya Hasegawa¹ (1.Univ. of Tokyo, 2.Nagoya Inst. of Technol., 3.UTTAC)

Keywords:Transparent conductor, SnO2, high-mobility

« Previous in this session
Next in this session »

▲

Presentation information

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [19p-Z33-8] Origin of high mobility in W-doped SnO2 thin films

△ [19p-Z33-8] Origin of high mobility in W-doped SnO₂ thin films