Oral presentation

[20a-A406-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Tue. Sep 20, 2022 9:00 AM - 11:30 AM A406 (A406)

Keisuke Yamamoto(Kyushu Univ.), Noriyuki Uchida(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-A406-1] Size Dependence of Photoluminescence Properties of Fe-silicide Nanodots

〇Haruto Saito¹, Katsunori Makihara¹, Noriyuki Taoka¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

9:15 AM - 9:30 AM

▲ [20a-A406-2] Dissociation Reaction of Si₂Cl₆ on Si(100): the Scanning Tunneling Spectroscopy Study

〇Leonid Bolotov¹, Hidetoshi Mimura², Yunosuke Sakai², Tetsuo Yamamoto², Takafumi Sasaki², Noriyuki Uchida¹ (1.AIST-DTech, 2.Kokusai Elec. Co.)

9:30 AM - 9:45 AM

[20a-A406-3] Classification of surface states on chlorosilane reacted Si using machine learning

〇Hidetoshi Mimura¹, Leonid Bolotov², Yuunosuke Sakai¹, Tetsuo Yamamoto¹, Takafumi Sasaki¹, Noriyuki Uchida² (1.KOKUSAI ELECTRIC Co., 2.AIST-DTech)

9:45 AM - 10:00 AM

[20a-A406-4] Physical mechanism for Palladium induced crystallization of amorphous-Silicon

〇Hiroiki Hayakawa¹, Ken Hoshino¹, Yusuke Mori¹, Takamitsu Ochi¹, Keiki Nagai¹, Makoto Fujiwara¹ (1.KIOXIA)

10:00 AM - 10:15 AM

[20a-A406-5] Evaluation of pits generated on CW laser crystallized Si thin film

〇(M2)Satoshi Takayama¹, Sasaki Nobuo^1,2, Uraoka Yukiharu¹ (1.NAIST, 2.Sasaki Consulting)

10:30 AM - 10:45 AM

[20a-A406-6] Characteristics of FD-SOI-MOSFETs using low-temperature sputtering SiO₂ gate insulator

〇WENCHANG YEH¹, Masato Ohya¹, Yusaku Magari¹ (1.Shimane Univ.)

10:45 AM - 11:00 AM

[20a-A406-7] Performance of polycrystalline SiGe thin-film transistors on glass substrates

〇Tatsuya Sagawa¹, Kotaro Kusunoki¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

11:00 AM - 11:15 AM

[20a-A406-8] Four-terminal poly-Si TFTs with high-k gate dielectric on glass substrates and their application in CMOS inverter

〇Akihisa Nagayoshi¹, Kaisei Nomura¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

11:15 AM - 11:30 AM

[20a-A406-9] Improvement of current drivability for metal S/D Ge n-MOSFET
by introduction of recessed channel structure (II)

〇(M2)Shingo Nasu¹, Dong Wang¹, Keisuke Yamamoto¹ (1.IGSES, Kyushu Univ)

Oral presentation

[20p-A406-1~13] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Tue. Sep 20, 2022 1:00 PM - 4:30 PM A406 (A406)

Tatsuya Okada(Univ. of the Ryukyus), Reo Kometani(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[20p-A406-1] Error Analysis in Automatic Operations of Minimal Fab To

〇Hiroyoshi Hongoh², Sommawan Khumpuang^2,1, Shiro Hara^2,1 (1.AIST, 2.MINIMAL)

1:15 PM - 1:30 PM

[20p-A406-2] Development of spin droplet cleaning technology that enables wafer backside cleaning(Ⅱ)

〇Kazumasa Nemoto¹, Takashi Yajima¹, Noriko Miura², Kazushige Sato², Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.Minimal Fab)

1:30 PM - 1:45 PM

[20p-A406-3] Monitoring CV characteristics in Minimal Fab for manufacturing process control

〇kazushige sato¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST)

1:45 PM - 2:00 PM

[20p-A406-4] Causes of measurement error of the Minimal Fab surface particle scanner

〇Takashi Yajima¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL)

2:00 PM - 2:15 PM

[20p-A406-5] Characteristics of AlN Film Deposited by Minimal Fab Reactive Sputtering Tool (3)

〇Shuichi Noda¹, Yuuki Yabuta³, Naoko Yamamoto³, Ryuichiro Kamei³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL, 3.Seinan-Kogyo)

2:15 PM - 2:30 PM

[20p-A406-6] Boron Doping Method using BCl₃ gas for Silicon Minimal CVD

Yuki Kamochi¹, 〇Hitoshi Habuka¹, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama National Univ., 2.MINIMAL, 3.AIST)

2:30 PM - 2:45 PM

[20p-A406-7] Evaluation II of Variation in Sheet Resistance of nMOSFET using Minimal-Fab Spin-on Dopant Process

〇Shuhei Nakamichi¹, Hiroyuki Tanaka², Fumito Imura², Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MinimalFab, 2.AIST)

3:00 PM - 3:15 PM

[20p-A406-8] Evaluation of Poly-Si Gate Electrode CVD Using Trisilane for Minimal Fab System

〇Tetsuya Goto¹, Seiji Kobayashi², Thai Quoc Cuong², Yuki Yabuta³, Shigetoshi Sugawa¹, Shiro Hara^4,5 (1.NICHe, Tohoku Univ., 2.Kotec, 3.Seinan, 4.AIST, 5.Minimal)

3:15 PM - 3:30 PM

[20p-A406-9] Study on Improvement of Al Wiring Dimension of Minimal Fab Multilayer Wiring Process

〇Masashi Kase¹, Khumpuang Sommawan^1,2, Shirou Hara^1,2 (1.AIST, 2.MINIMAL)

3:30 PM - 3:45 PM

[20p-A406-10] Study of pulse frequency dependence of RF bias in Bosch Process

〇Hiroyuki Tanaka¹, Yoshiyuki Nozawa², Toshihiro Hayami², Sommawan Khumpuang^1,3, Shiro Hara^1,3 (1.AIST, 2.SPPT, 3.MINIMAL)

3:45 PM - 4:00 PM

[20p-A406-11] Development of Process for Through Silicon Vias (TSVs) Fabricated by Minimal Fab (II)

〇Fumito Imura¹, Hiroyuki Tanaka¹, Kouji Oosawa², Takuro Kono², Kenzo Shodo², Yasuo Terasawa², Sommawan Khumpuang^1,3, Shiro Hara^1,3 (1.AIST, 2.NIDEK, 3.MINIMAL)

4:00 PM - 4:15 PM

[20p-A406-12] Comparison of Fully-Depleted(FD) and Partially-Depleted(PD) Operation of SOI CMOS of Minimal Fab

〇Takeshi Hamamoto¹, Shingo Ura³, Masahiro Matsuda³, Yuji Kitayama⁴, Satoshi Maruyama⁴, Sommawan Khumpuang², Yasunari Shiba⁴, Tadaaki Tsuchiya³, Shiro Hara² (1.MINIMAL, 2.AIST, 3.Logic Research, 4.Yokogawa Solution Service)

4:15 PM - 4:30 PM

[20p-A406-13] Study of three-axes Piezo-resistive Accelerometer using Full Minimal-Fab Process

〇Hiroshige Kogayu¹, Hiroyuki Tanaka², Fumito Imura², Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.MINIMAL, 2.AIST)

Oral presentation

[21a-A406-1~8] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Wed. Sep 21, 2022 9:00 AM - 11:15 AM A406 (A406)

Kaoru Toko(Univ. of Tsukuba), Junji Yamanaka(Univ. of Yamanashi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-A406-1] SiGe film growth via pulsed laser annealing of Al-Ge alloyed pastes on Si

〇Takeshi Sato¹, Satoru Miyamoto¹, Shota Suzuki^2,3, Marwan Dhamrin^2,3, Noritaka Usami¹ (1.Nagoya Univ., 2.Toyo Aluminium K.K., 3.Osaka Univ.)

9:15 AM - 9:30 AM

△ [21a-A406-2] Constant pressure molecular-dynamics simulations of explosive crystallization in amorphous Ge

〇Shunya Nagaoka¹, Manabu Ishimaru¹ (1.Kyushu Inst. Technol.)

9:30 AM - 9:45 AM

[21a-A406-3] Low Temperature Growth of Ge and Si/Ge Films on SiO₂ and Their TEM Observations

〇Hiroto Kondo¹, Keisuke Arimoto¹, Kosuke Hara¹, Junji Yamanaka¹ (1.Univ. of Yamanashi)

9:45 AM - 10:00 AM

△ [21a-A406-4] A study of crystallization process in Ge/Si stacked layer

〇(M2)Kento Sakane¹, Hajime Noaki¹, Yuichiro Mitani¹ (1.Tokyo City Univ)

10:15 AM - 10:30 AM

[21a-A406-5] Schottky Barrier Characterization of Pt/GeSn Contacts for Opt-Electronics Application

〇Noboru Shimizu¹, Yi Wang¹, Keisuke Yamamoto¹, Shiyu Zhang², Shigehisa Shibayama², Osamu Nakatsuka^2,3, Dong Wang¹ (1.IGSES, Kyushu Univ., 2.GS of Eng., Nagoya Univ., 3.IMaSS, Nagoya Univ.)

10:30 AM - 10:45 AM

[21a-A406-6] Formation of Rectifying Schottky Contact on Polycrsysalline P-type Ge

〇Kenta Moto^1,2, Kaoru Toko³, Tomonari Takayama¹, Toshifumi Imajo³, Keisuke Yamamoto¹ (1.Kyushu Univ., 2.JSPS Res. Fellow, 3.Univ. of Tsukuba)

10:45 AM - 11:00 AM

[21a-A406-7] Fermi-Level Pinning alleviation and Schottky barrier control on metal/poly-crystalline Ge

〇(M2)Tomonari Takayama¹, Kenta Moto^1,2, Kaoru Toko³, Dong Wang¹, Yamamoto Keisuke¹ (1.Kyusyu Univ., 2.JSPS Res. Fellow, 3.Univ. of Tsukuba)

11:00 AM - 11:15 AM

[21a-A406-8] Effects of n-type impurity doping in solid-phase crystallization of Ge thin films

〇Koki Nozawa¹, Takeshi Nishida^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of. Tsukuba, 2.JSPS Research Fellow)

Oral presentation

[22a-A406-1~5] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Thu. Sep 22, 2022 9:00 AM - 10:15 AM A406 (A406)

Yan Wu(Nihon Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [22a-A406-1] Noise floor estimation of Au proof-mass single-axis MEMS sensor module

〇Akira Onishi¹, Kisuke Miyado¹, Devi Srujana Tenneti¹, Parthojit Chakraborty¹, Katsuyuki Machida¹, Taiki Ogata¹, Hirotaka Uchitomi¹, Tso-Fu Mark Chang¹, Masato Sone¹, Yoshihiro Miyake¹, Hiroyuki Ito¹ (1.Tokyo Tech)

9:15 AM - 9:30 AM

△ [22a-A406-2] Study of simplified analytical damping constant model of Au MEMS capacitive accelerometer with perforated proof-mass structure

〇Kisuke Miyado¹, Akira Onishi¹, Devi Srujana Tenneti¹, Parthojit Chakraborty¹, Katsuyuki Machida¹, Shin-ichi Iida², Toshifumi Konishi², Masato Sone¹, Yoshihiro Miyake¹, Hiroyuki Ito¹ (1.Tokyo Tech, 2.NTT-AT)

9:30 AM - 9:45 AM

△ [22a-A406-3] Development of a liquid detection sensor system based on capacitance change between electrodes

〇Yui Suzuki¹, Fuminobu Imaizumi¹ (1.NIT, Oyama)

9:45 AM - 10:00 AM

▲ [22a-A406-4] Tailoring of Magnetic Sensing Performances of Single-crystal Diamond MEMS Magnetic Sensors via Interlayers

〇(P)Zilong Zhang¹, Liwen Sang¹, Yasuo Koide¹, Satoshi Koizumi¹, Meiyong Liao¹ (1.NIMS)

10:00 AM - 10:15 AM

△ [22a-A406-5] A Study on Electrical Characteristics of Self-Assembled Electrets for MEMS Vibration Energy Harvesters

〇(B)Ruichen Li¹, Reiki Sugimoto², Kosuke Kawashima², Yuya Tanaka³, Daisuke Yamane^1,2 (1.Ritsumeikan Univ., 2.GSSE, Ritsumeikan Univ., 3.GSST, Gunma Univ.)

Poster presentation

[23a-P05-1~1] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Fri. Sep 23, 2022 9:30 AM - 11:30 AM P05 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

9:30 AM - 11:30 AM

[23a-P05-1] A Consideration of Vapor-Permeable Membrane Structure for NEMS Vacuum Packaging in Narrow Space

〇Atsushi Miura¹, Keiichi Shimaoka¹, Keita Funayama¹, Hiroya Tanaka¹, Yukihiro Tadokoro¹ (1.TOYOTA CRDL)

Sessions

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[20a-A406-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

▲ [20a-A406-2] Dissociation Reaction of Si2Cl6 on Si(100): the Scanning Tunneling Spectroscopy Study

[20p-A406-1~13] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[21a-A406-1~8] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

△ [21a-A406-2] Constant pressure molecular-dynamics simulations of explosive crystallization in amorphous Ge

△ [21a-A406-4] A study of crystallization process in Ge/Si stacked layer

[22a-A406-1~5] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

△ [22a-A406-1] Noise floor estimation of Au proof-mass single-axis MEMS sensor module

△ [22a-A406-2] Study of simplified analytical damping constant model of Au MEMS capacitive accelerometer with perforated proof-mass structure

△ [22a-A406-3] Development of a liquid detection sensor system based on capacitance change between electrodes

▲ [22a-A406-4] Tailoring of Magnetic Sensing Performances of Single-crystal Diamond MEMS Magnetic Sensors via Interlayers

△ [22a-A406-5] A Study on Electrical Characteristics of Self-Assembled Electrets for MEMS Vibration Energy Harvesters

[23a-P05-1~1] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Authenticate

▲ [20a-A406-2] Dissociation Reaction of Si₂Cl₆ on Si(100): the Scanning Tunneling Spectroscopy Study