Oral presentation

[21a-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 21, 2022 9:00 AM - 11:30 AM A105 (A105)

Kouichi Akahane(NICT), Jiro Nishinaga(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-A105-1] Effect of Sb Beam Equivalent Pressure on Crystal Quality of AlInSb Thin Film

〇Ryuto Machida¹, Kouichi Akahane¹, Issei Watanabe¹, Shinsuke Hara¹, Akifumi Kasamatsu¹ (1.NICT)

9:15 AM - 9:30 AM

[21a-A105-2] Investigation of Effects on Crystallinity of Metamorphic InAsSb on GaAs Substrate by Stacked Thermal Annealing

〇Shota Nakagawa¹, Koki Hombu¹, Yuto Iwakiri¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

9:30 AM - 9:45 AM

[21a-A105-3] Strain Compensation and Emission Characteristics of InAsSb/InAsP Quantum Wells on InAs Substrate

〇Koki Hombu¹, Shota Nakagawa¹, Yuto Iwakiri¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

9:45 AM - 10:00 AM

[21a-A105-4] Characterization of photo-excited carriers in GaAs/GaAsBi structures by Raman spectroscopy

〇Sho Hasegawa¹, Noriyuki Hasuike¹, Kazutaka Kanegae¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

10:00 AM - 10:15 AM

[21a-A105-5] Analysis of hopping conduction mechanism in low-temperature-grown GaAs_1-_xBi_x

〇(M2)Minato Harada¹, Tatsuya Umenishi¹, Yusaku Kozai¹, Yoriko Tominaga¹, Mitsuki Yukimune², Fumitaro Ishikawa^2,3, Yasutomo Kajikawa⁴ (1.Hiroshima Univ., 2.Ehime Univ., 3.Hokkaido Univ., 4.Shimane Univ.)

10:30 AM - 10:45 AM

[21a-A105-6] Circularly polarized light emission properties of InAs quantum dots tunnel-coupled with a dilute nitride GaNAs quantum well with different thicknesses

〇Masayoshi Hosoe¹, Shino Sato¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaidou Univ.)

10:45 AM - 11:00 AM

[21a-A105-7] Temperature dependence of carrier mobility of InGaAsN grown on vicinal GaAs(001)

〇(M1)Hirotaka Tamashiro¹, Nobuaki Kojima¹, Yoshio Ohsita¹ (1.Toyota Tech. Inst.)

11:00 AM - 11:15 AM

[21a-A105-8] Effects of pore depth of Porous Si substrate on GaAs thin film growth

〇Ryunosuke Minamoto¹, Masahiro Kawano¹, Kosuke Fujioka¹, Hidetoshi Suzuki¹ (1.University of Miyazaki Faculty of Engineering)

11:15 AM - 11:30 AM

[21a-A105-9] Effect of initial growth process on residual strain anisotropy in GaAs/Si

〇(M1)Yuito Yasukochi¹, Nobuaki Kojima¹, Yoshio Ohshita¹ (1.Toyota Tech. Inst.)

Oral presentation

[21p-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 21, 2022 1:00 PM - 3:30 PM A105 (A105)

Takaaki Mano(NIMS), Fumitaro Ishikawa(Hokkaido Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [21p-A105-1] Near infrared photoresponsivity of polycrystalline In_xGa_1−xAs films formed on plastic

〇(D)Takeshi Nishida^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

1:15 PM - 1:30 PM

▲ [21p-A105-2] Surface Stability of reconstructions on BAs (111) surface: An Ab Initio-Based Approach

〇Peiyang Cai¹, Toru Akiyama², Tomomasa Kiyozawa¹, Takafumi Hatano¹, Shunta Harada^1,3, Miho Tagawa^1,3, Hiroshi Ikuta¹, Toru Ujihara^1,3 (1.Grad. School of Eng. Nagoya Univ., 2.Grad. School of Eng. Mie Univ., 3.IMaSS Nagoya Univ.)

1:30 PM - 1:45 PM

[21p-A105-3] Structural fluctuations and luminescence properties in (110) strained InGaAs quantum wells

〇Satoshi Iba¹, Yuzo Ohno^1,2 (1.AIST, 2.Univ. of Tsukuba)

1:45 PM - 2:00 PM

▲ [21p-A105-4] Control of the 3D Submonolayer Nanostructure Density by GaAs Spacer Thickness

〇Ronel Intal Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

2:00 PM - 2:15 PM

[21p-A105-5] Density Control of InAs Quantum Dots by Submonolayer Growth

〇Nao Hiratsuka¹, Ronel Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

2:30 PM - 2:45 PM

[21p-A105-6] The Influence of As Flux on GaAs Capping of InAs Quantum Dots on GaAs (001)

〇Natsuki Wakahara¹, Ronel Roca¹, Itaru Kamiya¹ (1.Toyota Tech Inst.)

2:45 PM - 3:00 PM

[21p-A105-7] Growth of ultra-low density of InAs quantum dot on InP(311)B substrates

〇Kouichi Akahane¹, Kiyora Kaneki², Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Tomohiro Maeda², Hideyuki Sotobayashi², Yoriko Tominaga³, Atsushi Kanno¹ (1.NICT, 2.Aoyama Gakuin Univ., 3.Hiroshima Univ.)

3:00 PM - 3:15 PM

[21p-A105-8] All-Arsenic L-band Quantum Dot Lasers on InP(001) substrate

〇JINKWAN KWOEN¹, Natalia Morais¹, Wenbo Zhan¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. Tokyo, 2.RCAST, Univ. Tokyo)

3:15 PM - 3:30 PM

[21p-A105-9] The Effect of Growth Speed on Photoluminescence of InGaP

〇Maui Hino¹, Meita Asami¹, Kentaroh Watanabe², Yoshiaki Nakano¹, Masakazu Sugiyama^1,2 (1.The Univ. of Tokyo, 2.RCAST)

Poster presentation

[22p-P10-1~6] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Sep 22, 2022 1:30 PM - 3:30 PM P10 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[22p-P10-1] Size Control and PL Characteristics for InSb Quantum Dots on GaSb Substrates

〇Emin Kuwabara¹, Kyosuke Yamamoto¹, Keisuke Koseki¹, Shinichiro Gozu², Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.AIST)

1:30 PM - 3:30 PM

[22p-P10-2] Electronic structure analysis of InSb_1-xN_x alloys by first-principles calculation

〇Sachie Fujikawa¹, Yoshitaka Fujiwara¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

1:30 PM - 3:30 PM

[22p-P10-3] Theoretical Analysis on Vacancies in GaPN Crystal for understanding Irradiation Effects on Dilute Nitride Alloys

〇Shun One¹, Akihiro Wakahara¹, Keisuke Yamane¹ (1.Toyohashi Tech.)

1:30 PM - 3:30 PM

[22p-P10-4] Metamorphic growth of InAs on GaAs (111)A: Growth temperature dependence

〇Takaaki Mano¹, Akihiro Ohtake¹, Takuya Kawazu¹, Sakuma Yoshiki¹ (1.NIMS)

1:30 PM - 3:30 PM

[22p-P10-5] Growth conditions of the InGaAs thin film with 1-μm-band broadband and high-intensity emission (II)

〇Kosuke Iwaide¹, Nobuhiko Ozaki¹, Koki Okuno¹ (1.Wakayama Univ.)

1:30 PM - 3:30 PM

[22p-P10-6] Circularly polarized light emission properties of InGaAs quantum dots with different In compositions capped at a high growth rate

〇Sohsuke Izumi¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

Sessions

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21a-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21a-A105-1] Effect of Sb Beam Equivalent Pressure on Crystal Quality of AlInSb Thin Film

[21a-A105-2] Investigation of Effects on Crystallinity of Metamorphic InAsSb on GaAs Substrate by Stacked Thermal Annealing

[21a-A105-3] Strain Compensation and Emission Characteristics of InAsSb/InAsP Quantum Wells on InAs Substrate

[21a-A105-4] Characterization of photo-excited carriers in GaAs/GaAsBi structures by Raman spectroscopy

[21a-A105-5] Analysis of hopping conduction mechanism in low-temperature-grown GaAs_1-_xBi_x

[21a-A105-6] Circularly polarized light emission properties of InAs quantum dots tunnel-coupled with a dilute nitride GaNAs quantum well with different thicknesses

[21a-A105-7] Temperature dependence of carrier mobility of InGaAsN grown on vicinal GaAs(001)

[21a-A105-8] Effects of pore depth of Porous Si substrate on GaAs thin film growth

[21a-A105-9] Effect of initial growth process on residual strain anisotropy in GaAs/Si

[21p-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [21p-A105-1] Near infrared photoresponsivity of polycrystalline In_xGa_1−xAs films formed on plastic

▲ [21p-A105-2] Surface Stability of reconstructions on BAs (111) surface: An Ab Initio-Based Approach

[21p-A105-3] Structural fluctuations and luminescence properties in (110) strained InGaAs quantum wells

▲ [21p-A105-4] Control of the 3D Submonolayer Nanostructure Density by GaAs Spacer Thickness

[21p-A105-5] Density Control of InAs Quantum Dots by Submonolayer Growth

[21p-A105-6] The Influence of As Flux on GaAs Capping of InAs Quantum Dots on GaAs (001)

[21p-A105-7] Growth of ultra-low density of InAs quantum dot on InP(311)B substrates

[21p-A105-8] All-Arsenic L-band Quantum Dot Lasers on InP(001) substrate

[21p-A105-9] The Effect of Growth Speed on Photoluminescence of InGaP

[22p-P10-1~6] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[22p-P10-1] Size Control and PL Characteristics for InSb Quantum Dots on GaSb Substrates

[22p-P10-2] Electronic structure analysis of InSb_1-xN_x alloys by first-principles calculation

[22p-P10-3] Theoretical Analysis on Vacancies in GaPN Crystal for understanding Irradiation Effects on Dilute Nitride Alloys

[22p-P10-4] Metamorphic growth of InAs on GaAs (111)A: Growth temperature dependence

[22p-P10-5] Growth conditions of the InGaAs thin film with 1-μm-band broadband and high-intensity emission (II)

[22p-P10-6] Circularly polarized light emission properties of InGaAs quantum dots with different In compositions capped at a high growth rate

Authenticate

Sessions

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21a-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21p-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [21p-A105-1] Near infrared photoresponsivity of polycrystalline InxGa1−xAs films formed on plastic

▲ [21p-A105-2] Surface Stability of reconstructions on BAs (111) surface: An Ab Initio-Based Approach

▲ [21p-A105-4] Control of the 3D Submonolayer Nanostructure Density by GaAs Spacer Thickness

[22p-P10-1~6] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Authenticate

△ [21p-A105-1] Near infrared photoresponsivity of polycrystalline In_xGa_1−xAs films formed on plastic