Oral presentation

[21a-A106-1~9] 15.5 Group IV crystals and alloys

Wed. Sep 21, 2022 9:00 AM - 11:15 AM A106 (A106)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-A106-1] Stable Structure Search of Ge−Sn Alloy by First-Principles Calculations and Genetic Algorithm

〇Yusuke Noda¹, Koji Sueoka¹ (1.Okayama Pref. Univ.)

9:15 AM - 9:30 AM

[21a-A106-2] Improved thermoelectric properties of polycrystalline Ge layers by ternary alloying

〇Shintaro Maeda¹, Takamitsu Ishiyama¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

9:30 AM - 9:45 AM

[21a-A106-3] High Carrier Mobility of Sn-Doped Poly-Ge Films by Interface-Modulated Solid-Phase Crystallization Combined with Post-Annealing

〇Taishiro Koga¹, Takaya Nagano¹, Kenta Moto^2,3, Kesuke Yamamoto², Taizo Sadoh¹ (1.ISEE, Kyushu Univ., 2.IGSES, Kyushu Univ., 3.JSPS Research Fellow)

9:45 AM - 10:00 AM

[21a-A106-4] Binary alloy nanodots as nuclei for solid phase crystallization of poly-SiGeSn

〇yusei shirai¹, Hirokazu Tatsuoka¹, Yosuke Shimura^1,2 (1.Shizuoka Univ., 2.RIE Shizuoka Univ.)

10:00 AM - 10:15 AM

[21a-A106-5] Solid Phase Growth of Group IV Ternary Alloy Nucleated by Si-Nanowires

〇Tokimune Motofuji¹, Hirokazu Tatsuoka¹, Yosuke Shimura^1,2 (1.Shizuoka Univ., 2.RIE Shizuoka Univ.)

10:15 AM - 10:30 AM

▼ [21a-A106-6] Effect of CW Laser Annealing on the Optical Properties of Polycrystalline n-type Ge

〇Rahmat Hadi Saputro^1,2, Ryo Matsumura¹, Tatsuro Maeda³, Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba, 3.AIST)

10:30 AM - 10:45 AM

△ [21a-A106-7] Thin-film synthesis of polycrystalline Yb₃Ge₅ using solid-phase crystallization for thermoelectric applications

〇Takamitsu Ishiyama¹, Tomoki Ozawa¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

10:45 AM - 11:00 AM

[21a-A106-8] GeSn epitaxial growth on Ge(100) substrate by sputter deposition

〇Mizuki Kuniyoshi^1,2, Kazuya Abe², Nobuyuki Tanaka², Masaki Hoshihara², Takuma Kobayashi², Takayoshi Shimura², Heiji Watanabe² (1.ULVAC, Inc., 2.Osaka Univ.)

11:00 AM - 11:15 AM

△ [21a-A106-9] Characterization of Sputter Deposited Epitaxial GeSn Layers on Ge(100) Substrate

〇Nobuyuki Tanaka¹, Kazuya Abe¹, Masaki Hoshihara¹, Mizuki Kuniyoshi², Takuma Kobayashi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.ULVAC, Inc.)

Oral presentation

[21p-A106-1~18] 15.5 Group IV crystals and alloys

Wed. Sep 21, 2022 1:00 PM - 5:45 PM A106 (A106)

Kaoru Toko(Univ. of Tsukuba), Ryo Matsumura(National Institute for Materials Science (NIMS))

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[21p-A106-1] Crystallinity improvement of ultra-high Sn contents Ge_1−xSn_x heteroepitaxial layers grown on InP substrates

〇Komei Takagi¹, Shigehisa Shibayama¹, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1.Grad. Sch. Eng., Nagoya Univ, 2.IMaSS, Nagoya Univ)

1:15 PM - 1:30 PM

[21p-A106-2] Formation of direct transition Ge_1-xSn_xhetero epitaxial layer on Si(111) substrate

〇Shunsuke Mori¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

1:30 PM - 1:45 PM

△ [21p-A106-3] Evaluation of Band Structure in Strained Single Crystalline Si_1-xSn_x

〇Keita Sahara¹, Ryo Yokogawa^1,2, Yuki Shibayama¹, Yusuke Hibino^2,3, Masashi Kurosawa⁴, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.NITS, 4.Nagoya Univ.)

1:45 PM - 2:00 PM

[21p-A106-4] TEM Observation of Cracks Formed in Strained SiGe/Ge (111)

〇Kouta Tajima¹, Junji Yamanaka¹, Keisuke Arimoto¹, Kosuke Hara¹, Yuya Wagatuma², Kentarou Sawano² (1.Univ. of Yamanashi, 2.Tokyo City Univ.)

2:00 PM - 2:15 PM

[21p-A106-5] Influences of mesa-etching depth on crack propagation in strained SiGe on Ge(111)

〇Youya Wagatsuma¹, Rena Kanesawa¹, Alam Md. Mahfuz^1,2, Kazuya Okada¹, Takahiro Inoue¹, Michihiro Yamada³, Kohei Hamaya^3,4, Kentarou Sawano¹ (1.Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ., 4.OTRI, Osaka Univ.)

2:15 PM - 2:30 PM

[21p-A106-6] Influences of crack generation on transport properties in strained SiGe grown on Ge-on-Si(111)

〇Daigo Ichikawa¹, Youya Wagatsuma¹, Michihiro Yamada², Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ.)

2:30 PM - 2:45 PM

△ [21p-A106-7] Distribution Evaluation of Optical Properties in Strain Relaxed SiGe Films with Graded SiGe Buffer Layers

〇Yuki Shibayama¹, Ryo Yokogawa^1,2, Atsushi Ogura^1,2 (1.Meiji Univ., 2.Meiji Renewable Energy Laboratory.)

2:45 PM - 3:00 PM

[21p-A106-8] Observation of resonant light emission by fabrication of branch-like microbridge based on Ge-on-Si (110)

〇Takahiro Inoue¹, Youya Wagatsuma¹, Reo Ikegaya¹, Ayaka Odashima¹, Masaki Nagao¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

3:00 PM - 3:15 PM

[21p-A106-9] Effects of slit insertion on optical properties for biaxially strained Ge microbridges

〇Takuya Komazawa¹, Reo Ikegaya¹, Takahiro Inoue¹, Youya Wagatsuma¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

3:30 PM - 3:45 PM

[21p-A106-10] Strong Room-temperature EL emissions from strained SiGe/Ge-on-Si(111)LEDs

〇Shuya Kikuoka¹, Youya Wagatsuma¹, Yuwa Sugiura¹, Rena Kanesawa¹, Michihiro Yamada², Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Tokyo City Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ.)

3:45 PM - 4:00 PM

[21p-A106-11] Fabrication of SiGe/Ge Multiple Quantum Wells on Ge-on-Si (100) and Their Optical Properties

〇Rena Kanesawa¹, Youya Wagatsuma¹, Syuya Kikuoka¹, Yuwa Sugiura¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

4:00 PM - 4:15 PM

[21p-A106-12] Self-formation of Ge_1−xSn_x quantum dots with high thermal stability

〇Kaoru Hashimoto¹, Shigehisa Shibayama¹, Koji Asaka¹, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

4:15 PM - 4:30 PM

△ [21p-A106-13] Triaxial Strain Evaluation for Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping (III)

〇Kazutoshi Yoshioka^1,2, Kirito Cho¹, Yuta Ito¹, Sho Sugawa¹, Ichiro Hirosawa^2,3, Takeshi Watanabe⁴, Ryo Yokogawa^1,2, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.SAGA-LS, 4.JASRI)

4:30 PM - 4:45 PM

△ [21p-A106-14] Study on Layer Transfer of Ultrathin Ge Crystals Segregated on Al/Ge(111)

〇Keigo Matsushita¹, Akio Ohta¹, Shigehisa Shibayama¹, Noriyuki Taoka¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

4:45 PM - 5:00 PM

[21p-A106-15] Impacts of Si Capping Layer in Formation of Ultra-Thin Nickel Silicide Film

〇Keisuke Kimura¹, Noriyuki Taoka¹, Shunsuke Nishimura¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Grad. Sch. of Eng., Nagoya Univ.)

5:00 PM - 5:15 PM

[21p-A106-16] Electrical and Electronic properties of Mono-crystalline Nickel-germanide Films

〇Shunsuke Nishimura¹, Noriyuki Taoka¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

5:15 PM - 5:30 PM

[21p-A106-17] Formation of multilayer silicane nanosheets on high-resistivity Si(111) substrates

Yoshitsune Ito¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2, 〇Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

5:30 PM - 5:45 PM

△ [21p-A106-18] Helicity dependent photoelectric conversion in Ge nanosheet on Al grown by segregation method

〇Taiki Nishijima¹, Keigo Matsushita², Ei Shigematsu¹, Ryo Ohshima¹, Akio Ohta², Yuichiro Ando¹, Masashi Shiraishi¹ (1.Kyoto Univ., 2.Nagoya Univ.)

Poster presentation

[22p-P11-1~3] 15.5 Group IV crystals and alloys

Thu. Sep 22, 2022 1:30 PM - 3:30 PM P11 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[22p-P11-1] Fabrication and optical properties of P-doped Ge nano dots on hierarchical nanoporous layer glass substrates

〇Masaki Nagao¹, Takahiro Inoue¹, Ayaka Odashima¹, Youya Wagatsuma¹, Takuya Fujima¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

1:30 PM - 3:30 PM

[22p-P11-2] Effects of hole size on optical properties of strained Ge microbridge with mesh-type pads

〇Reo Ikegaya¹, Takahiro Inoue¹, Takuya Komazawa¹, Youya Wagatsuma¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

1:30 PM - 3:30 PM

[22p-P11-3] Influences of injection currents on room temperature EL emission peaks from Ge-on-Si (111) LEDs

〇Yuwa Sugiura¹, Syuya Kikuoka¹, Youya Wagatsuma¹, Rena Kanesawa¹, Yusuke Hoshi¹, Michihiro Yamada², Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Adv. Res. Lab., Tokyo City Univ., 2.CSRN, Osaka Univ., 3.OTRI, Osaka Univ.)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[21a-A106-1~9] 15.5 Group IV crystals and alloys

[21a-A106-1] Stable Structure Search of Ge−Sn Alloy by First-Principles Calculations and Genetic Algorithm

[21a-A106-2] Improved thermoelectric properties of polycrystalline Ge layers by ternary alloying

[21a-A106-3] High Carrier Mobility of Sn-Doped Poly-Ge Films by Interface-Modulated Solid-Phase Crystallization Combined with Post-Annealing

[21a-A106-4] Binary alloy nanodots as nuclei for solid phase crystallization of poly-SiGeSn

[21a-A106-5] Solid Phase Growth of Group IV Ternary Alloy Nucleated by Si-Nanowires

▼ [21a-A106-6] Effect of CW Laser Annealing on the Optical Properties of Polycrystalline n-type Ge

△ [21a-A106-7] Thin-film synthesis of polycrystalline Yb₃Ge₅ using solid-phase crystallization for thermoelectric applications

[21a-A106-8] GeSn epitaxial growth on Ge(100) substrate by sputter deposition

△ [21a-A106-9] Characterization of Sputter Deposited Epitaxial GeSn Layers on Ge(100) Substrate

[21p-A106-1~18] 15.5 Group IV crystals and alloys

[21p-A106-1] Crystallinity improvement of ultra-high Sn contents Ge_1−xSn_x heteroepitaxial layers grown on InP substrates

[21p-A106-2] Formation of direct transition Ge_1-xSn_xhetero epitaxial layer on Si(111) substrate

△ [21p-A106-3] Evaluation of Band Structure in Strained Single Crystalline Si_1-xSn_x

[21p-A106-4] TEM Observation of Cracks Formed in Strained SiGe/Ge (111)

[21p-A106-5] Influences of mesa-etching depth on crack propagation in strained SiGe on Ge(111)

[21p-A106-6] Influences of crack generation on transport properties in strained SiGe grown on Ge-on-Si(111)

△ [21p-A106-7] Distribution Evaluation of Optical Properties in Strain Relaxed SiGe Films with Graded SiGe Buffer Layers

[21p-A106-8] Observation of resonant light emission by fabrication of branch-like microbridge based on Ge-on-Si (110)

[21p-A106-9] Effects of slit insertion on optical properties for biaxially strained Ge microbridges

[21p-A106-10] Strong Room-temperature EL emissions from strained SiGe/Ge-on-Si(111)LEDs

[21p-A106-11] Fabrication of SiGe/Ge Multiple Quantum Wells on Ge-on-Si (100) and Their Optical Properties

[21p-A106-12] Self-formation of Ge_1−xSn_x quantum dots with high thermal stability

△ [21p-A106-13] Triaxial Strain Evaluation for Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping (III)

△ [21p-A106-14] Study on Layer Transfer of Ultrathin Ge Crystals Segregated on Al/Ge(111)

[21p-A106-15] Impacts of Si Capping Layer in Formation of Ultra-Thin Nickel Silicide Film

[21p-A106-16] Electrical and Electronic properties of Mono-crystalline Nickel-germanide Films

[21p-A106-17] Formation of multilayer silicane nanosheets on high-resistivity Si(111) substrates

△ [21p-A106-18] Helicity dependent photoelectric conversion in Ge nanosheet on Al grown by segregation method

[22p-P11-1~3] 15.5 Group IV crystals and alloys

[22p-P11-1] Fabrication and optical properties of P-doped Ge nano dots on hierarchical nanoporous layer glass substrates

[22p-P11-2] Effects of hole size on optical properties of strained Ge microbridge with mesh-type pads

[22p-P11-3] Influences of injection currents on room temperature EL emission peaks from Ge-on-Si (111) LEDs

Authenticate

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[21a-A106-1~9] 15.5 Group IV crystals and alloys

▼ [21a-A106-6] Effect of CW Laser Annealing on the Optical Properties of Polycrystalline n-type Ge

△ [21a-A106-7] Thin-film synthesis of polycrystalline Yb3Ge5 using solid-phase crystallization for thermoelectric applications

△ [21a-A106-9] Characterization of Sputter Deposited Epitaxial GeSn Layers on Ge(100) Substrate

[21p-A106-1~18] 15.5 Group IV crystals and alloys

△ [21p-A106-3] Evaluation of Band Structure in Strained Single Crystalline Si1-xSnx

△ [21p-A106-7] Distribution Evaluation of Optical Properties in Strain Relaxed SiGe Films with Graded SiGe Buffer Layers

△ [21p-A106-13] Triaxial Strain Evaluation for Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping (III)

△ [21p-A106-14] Study on Layer Transfer of Ultrathin Ge Crystals Segregated on Al/Ge(111)

△ [21p-A106-18] Helicity dependent photoelectric conversion in Ge nanosheet on Al grown by segregation method

[22p-P11-1~3] 15.5 Group IV crystals and alloys

Authenticate

△ [21a-A106-7] Thin-film synthesis of polycrystalline Yb₃Ge₅ using solid-phase crystallization for thermoelectric applications

△ [21p-A106-3] Evaluation of Band Structure in Strained Single Crystalline Si_1-xSn_x