Oral presentation

[20a-B203-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 20, 2022 9:00 AM - 11:45 AM B203 (B203)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-B203-1] Preparation of Cu_xO film by mist CVD method - Relationship between mist spatial distribution in a tube furnace and film structure -.

〇(M2)Ryota Sato¹, Kojun Yokoyama¹, Hajime Shirai¹ (1.Saitama Univ.)

9:15 AM - 9:30 AM

[20a-B203-2] Diagnostic of Ti(acac)₄ mist transport in tubular furnace

〇(M2)Kojun Yokoyama¹, Kuddus Abdul¹, Hajime Shirai¹ (1.Saitama Univ.)

9:30 AM - 9:45 AM

[20a-B203-3] Fabrication of anatase TiO₂ thin films by water-based mist-CVD

〇Tomohito Sudare¹, Han Xu¹, Yumie Miura¹, Ryo Nakayama¹, Ryota Shimizu¹, Naoomi Yamada², Kentaro Kaneko³, Taro Hitosugi^1,4 (1.Tokyo Tech., 2.Chubu Univ., 3.Kyoto Univ., 4.Univ. Tokyo)

9:45 AM - 10:00 AM

[20a-B203-4] Drain Current Reduction by Ozone and Recovery by Photon Irradiation in IGZO-TFT

〇(M2)Hiroharu Sasajima¹, Takaaki Morimoto¹, Keisuke Ishii¹ (1.NDA)

10:00 AM - 10:15 AM

[20a-B203-5] Hot-wire Oxidization for In-Sn-Zn-O and assessment of the TFT reliability

〇Ryuichi Tamai¹, Shimizu Kousaku¹ (1.Nihon Univ.)

10:30 AM - 10:45 AM

[20a-B203-6] Crystal structure and orientation of Si doped WO₃ films

〇Yutaka Adachi¹ (1.NIMS)

10:45 AM - 11:00 AM

[20a-B203-7] Effects of Weak Localization of Carriers on the Electron-Phonon Interaction in W-Doped In₂O₃ Thin Films

〇Tetsuya Yamamoto^1,2, Rajasekaran Palani¹, Hisao Makino² (1.Kochi Univ. Tech., Res. Inst., 2.Kochi Univ. Tech.)

11:00 AM - 11:15 AM

[20a-B203-8] Incorporation of Bismuth into In₂O₃ thin films for visible light responsive photocatalyst

〇(M1)Yoko Taniguchi¹, Kazuki Shimazoe¹, Hiroyuki Nishinaka¹, Toshiyuki Kawaharamura², Kazutaka Kanegae¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech., 2.Kochi Univ. Tech.)

11:15 AM - 11:30 AM

[20a-B203-9] Control of the transport properties of the InGaO₃(ZnO)_n single crystals by the O₂ annealing effect

〇Naoki Kase¹, Tadahito Inoue¹, Yuto Uruma¹, Yusuke Kawamura¹, Fuyuki Kawakami¹, Nobuaki Miyakawa¹ (1.Tokyo Univ. Sci.)

11:30 AM - 11:45 AM

[20a-B203-10] Performance evaluation of oxide semiconductors using photosensitive high-k hybrid
Barium Titanate/Polysiloxane as gate insulator

〇Taisei Ando¹, Bermundo Juan Paolo Soria¹, Yamamoto Atsuko², Tanaka Hiroyuki¹, Uraoka Yukiharu¹ (1.NAIST, 2.Merck Electronics)

Oral presentation

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 20, 2022 1:00 PM - 7:00 PM B203 (B203)

Takeyoshi Onuma(Kogakuin Univ.), Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

▲ [20p-B203-1] Impact of Au surfactant on composition and optical properties of gallium oxysulfide films

〇(D)Weiqi Zhou¹, Takuto Soma¹, Akira Ohtomo¹ (1.Tokyo Tech)

1:15 PM - 1:30 PM

[20p-B203-2] (Ir_xGa_1-x)₂O₃/α-Al₂O₃(0001) heterogrowth by PLD method

〇(M2)Shunnosuke Miki¹, Hyuga Matsuda¹, Naohumi Takeda¹, Yasushi Hotta¹, Yi Tang¹, Kouhei Sasaki², Akito Kuramata², Kazushi Miki¹ (1.U. Hyogo, 2.NCT)

1:30 PM - 1:45 PM

[20p-B203-3] Study for Composition Control of (Ga_1-xIn_x)₂O₃ Alloys Growth by Mist CVD Method

〇(M1)Kai Yamada¹, Rie Yamada¹, Akito Taguchi¹, Subaru Takahashi¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin Univ.)

1:45 PM - 2:00 PM

[20p-B203-4] Impact of Chemical Reaction in the Source Solution on Growth of α-In₂O₃ by Mist CVD

〇Takumi Yamamoto¹, Akito Taguchi¹, Rie Yamada¹, Hiroki Nagai¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin Univ.)

2:00 PM - 2:15 PM

[20p-B203-5] Investigation for growth of high quality β-Ga₂O₃ thin film by direct synthesis method

〇Kohei Takata¹, Katsushi Nishino¹ (1.Tokushima Univ.)

2:15 PM - 2:30 PM

[20p-B203-6] 【Highlighted Presentation】Crystallinity improvement of 100-mm-diameter β-Ga₂O₃ epitaxial wafer

〇Lin ChiaHung¹, Kentaro Ema¹, Satoshi Masuya¹, Quang Tu Thieu¹, Ryoichi Sakaguchi¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology)

2:30 PM - 2:45 PM

[20p-B203-7] High temperature annealing of N-implanted β-Ga₂O₃(001): face up anneal

〇(M1)HYUGA MATSUDA¹, Syunnosuke Miki¹, Ryusuke Iimura², Yi Tang¹, Kouhei Sasaki², Akihito Kuramata², Kazushi Miki¹ (1.Hyogo Univ., 2.NCT)

3:00 PM - 3:15 PM

[20p-B203-8] Backside exposure photolithography for metal-masked β-Ga₂O₃ substrates

〇Takayoshi Oshima¹ (1.NIMS)

3:15 PM - 3:30 PM

[20p-B203-9] Dependence of growth conditions on b-Ga₂O₃ crystal quality grown by OCCC method

〇Isao Takahashi^1,2, Kochurikhin Vladimir¹, Tomida Taketoshi¹, Yao Yongzhao³, Sato Koji³, Ishikawa Yukari³, Sugawara Takamasa², Shoji Yasuhiro¹, Kamada Kei^1,2, Kakimoto Koichi², Yoshikawa Akira^1,2 (1.C&A corp., 2.Tohoku Univ., 3.JFCC)

3:30 PM - 3:45 PM

▲ [20p-B203-10] Investigation of Capacitance–Voltage Characteristics of p-Si/n-Ga₂O₃ Heterostructures Fabricated by Surface-Activated Bonding

〇Zhenwei Wang¹, Daiki Takatsuki², Jianbo Liang², Takahiro Kitada^1,2, Naoteru Shigekawa², Masataka Higashiwaki^1,2 (1.NICT, 2.OMU)

3:45 PM - 4:00 PM

[20p-B203-11] Changes in bandgaps of β-Ga₂O₃ induced by biaxial lattice strain

〇Takahiro Kawamura¹, Toru Akiyama¹ (1.Mie Univ.)

4:00 PM - 4:15 PM

[20p-B203-12] Selective area growth of β-Ga₂O₃ by HCl-based halide vapor phase epitaxy

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

4:15 PM - 4:30 PM

[20p-B203-13] Theoretical study for structural stability of Ga₂O₃ with charged oxygen vacancies

〇Toru Akiyama¹, Takahiro Kawamura¹, Tomonori Ito¹ (1.Mie Univ.)

4:30 PM - 4:45 PM

[20p-B203-14] Thermodynamic study of group-III sesquioxide growth by molecular beam epitaxy

〇Rie Togashi¹, Haruka Ishida¹, Ken Goto², Masataka Higashiwaki^3,4, Yoshinao Kumagai² (1.Sophia Univ., 2.Tokyo Univ. of Agric. and Tech., 3.Osaka Metropolitan Univ., 4.NICT)

4:45 PM - 5:00 PM

[20p-B203-15] Comparison of β-Ga₂O₃ growth by metalorganic vapor phase epitaxy using triethylgallium and diethylgallium ethoxide

〇Ken Goto¹, Taro Nishimura¹, Haruka Tozato¹, Kazutada Ikenaga^1,2, Shogo Sasaki³, Masato Ishikawa⁴, Hideaki Machida⁴, Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO Corp., 3.TUAT FLOuRISH, 4.Gas-Phase Growth Ltd.)

5:15 PM - 5:30 PM

[20p-B203-16] Temperature dependence of β-Ga₂O₃ homoepitaxial growth by MOVPE

〇Kazutada Ikenaga^1,2, Taro Nishimura¹, Ken Goto¹, Masato Ishikawa³, Hideaki Machida³, Tomo Ueno¹, Yoshinao Kumagai¹ (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO Corp., 3.Gas-Phase Growth Ltd.)

5:30 PM - 5:45 PM

[20p-B203-17] Effect of etching gas addition on β-Ga₂O₃ HVPE growth

〇(M2)Risa Nagano¹, Kentaro Ema², Kohei Sasaki², Akito Kuramata², Hisashi Murakami¹ (1.Tokyo Univ. of Agri. and Tech., 2.Novel Crystal Technology, Inc.)

5:45 PM - 6:00 PM

[20p-B203-18] Characteristics of Ga₂O₃/3C-SiC direct bonding for improving heat dissipation of power devices

〇(M2)Hiromu Nagai¹, Keisuke Kawamura², Hiroki Uratani², Yoshiki Sakaida², Naoteru Shigekawa^1,3, Jianbo Liang^1,3 (1.Osaka City Univ., 2.Air Water Inc., 3.Osaka Metropolitan Univ.)

6:00 PM - 6:15 PM

[20p-B203-19] Single-domain κ-Ga₂O₃ thin films grown on ε-GaFeO₃ substrates

〇HIROYUKI NISHINAKA¹, OSAMU UEDA², HIDEKI SAKO³, NORIAKI IKENAGA⁴, YUJI MIYATO⁵, NORIYUKI HASUIKE¹, KAZUTAKA KANEGAE¹, MASAHIRO YOSHIMOTO¹ (1.Kyoto Inst. Tech., 2.Meiji Univ., 3.Toray Res. Center, 4.Kanazawa Inst. Tech., 5.Ryukoku Univ.)

6:15 PM - 6:30 PM

[20p-B203-20] Development of Defects with Increased Al Composition in (Al_xGa_1-x)₂O₃ Thin Films

〇Takumi Ohtsuki¹, Masataka Higashiwaki^1,2 (1.NICT, 2.Osaka Metropolitan Univ.)

6:30 PM - 6:45 PM

[20p-B203-21] Growth of α-(AlGa)₂O₃ and α-Ga₂O₃ thin films by mist chemical vapor deposition using acetylacetonated Al and Ga source solutions

〇Kazuyuki Uno¹, Hiroto Tamura¹, Marika Ohta¹ (1.Wakayama Univ.)

6:45 PM - 7:00 PM

[20p-B203-22] Growth of Ga₂O₃ thin films on Si substrates by mist CVD technique

〇(M2)Eiji Kikuchi¹, Kaneko Kentaro¹, Fujita Shizuo¹ (1.Kyoto Univ.)

Oral presentation

[21a-B203-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 21, 2022 9:00 AM - 12:00 PM B203 (B203)

Kohei SHIMA(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-B203-1] Synthesis of Zinc Oxide Thin Film by Using IR Laser Deposition

〇Tatsuya Masuda¹, Takuro Dazai^1,2, Toshihiro Sato³, Norihiko Sekine⁴, Iwao Hosako⁴, Ryota Takahashi², Hideomi Koinuma¹ (1.SCT, 2.Nihon Univ., 3.Vacuum Products, 4.NICT)

9:15 AM - 9:30 AM

[21a-B203-2] Non-polar p-type ZnMgO:N thin films grown by MBE

〇Keno Goto¹, Tsunataka Hagiwara¹, Ayumu Hyodo¹, Masaru Komido¹, Tomoki Abe¹, Kunio Ichino¹, Kazuaki Akaiwa¹ (1.Tottori Univ.)

9:30 AM - 9:45 AM

[21a-B203-3] Structural control of ZnO thin film by chemical bath deposition with additives

〇Yamato Takeuchi¹, Kentaro Watanabe^1,2 (1.Shinshu Univ., 2.Shinshu Univ. IFES)

9:45 AM - 10:00 AM

[21a-B203-4] Impact of H₂O₂ addition on ZnO nanostructures synthesis

〇Yutaro Kitazawa¹, Kentaro Watanabe^1,2 (1.Shinshu Univ., 2.Shinshu Univ. IFES)

10:00 AM - 10:15 AM

[21a-B203-5] Prediction of doping trends in rock salt structured MgZnO alloys

〇Yuichi Ota¹, Kentaro Kaneko², Takeyoshi Onuma³, Shizuo Fujita² (1.TIRI, 2.Kyoto Univ., 3.Kogakuin Univ.)

10:15 AM - 10:30 AM

[21a-B203-6] Electric field dependence of the absorption edge in a high resistivity ZnO substrate

〇Haruyuki Endo¹, Kashiwaba Yasube² (1.Iwate Ind. Res. Inst., 2.Iwate Univ.)

10:45 AM - 11:00 AM

[21a-B203-7] Electrical control of ZnO random lasing characteristics by liquid crystals

〇Naoto Hara¹, Toshihiro Nakamura¹, Tomoyuki Sasaki² (1.Hosei Univ., 2.Nagaoka Univ. Tech.)

11:00 AM - 11:15 AM

[21a-B203-8] Local Bonding States of SnO_x Thin-Film by Reduction Annealing in N₂

〇Kotaro Watanabe¹, Takuma Kawaguchi¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

11:15 AM - 11:30 AM

[21a-B203-9] Characterization of Nitrogen-doped SnO_x Thin Films Deposited by Sputtering in Ar/N₂

〇(M1)Takuma Kawaguchi¹, Kotaro Watanabe¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

11:30 AM - 11:45 AM

[21a-B203-10] Random lasing from laser-induced roughness structures on ZnO single crystal

〇Yuki Kamakura¹, Toshihiro Nakamura¹, Ryota Suzuki¹ (1.Hosei Univ.)

11:45 AM - 12:00 PM

[21a-B203-11] QCM Sensor Application of Zinc Oxide Thin Films Prepared by Mist CVD Method

〇Takumi Kimura¹, Toshiki Kitamura¹, Yujji Nakabayashi², Satoru Yamada¹ (1.NIT, Ishikawa, 2.JAIST)

Oral presentation

[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 21, 2022 1:15 PM - 6:45 PM B203 (B203)

Kazuyuki Uno(Wakayama Univ.), Kosaku Shimizu(Nihon Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

△ [21p-B203-1] Heteroepitaxial growth of β-(Al_xGa_1-x)₂O₃/β-(In_xGa_1-x)₂O₃/β-Ga₂O₃ thin films via mist CVD

〇Masahiro Kaneko¹, Hiroyuki Nishinaka¹, Kazutaka Kanegae¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

1:30 PM - 1:45 PM

△ [21p-B203-2] Time-of-flight mass spectrometric study of metalorganic vapor phase epitaxy process of β-Ga₂O₃

〇(M1)Haruka Tozato¹, Taro Nishimura¹, Kazutada Ikenaga^1,2, Shogo Sasaki³, Ken Goto¹, Masato Ishikawa⁴, Hideaki Machida⁴, Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO Corp., 3.TUAT FLOuRISH, 4.Gas-Phase Growth Ltd.)

1:45 PM - 2:00 PM

△ [21p-B203-3] Epitaxial growth of β-Ga₂O₃ thin films with in-plane compressive strain

〇Kazuki koreishi¹, Takuto Soma¹, Motohisa Kado², Akira Ohtomo¹ (1.Tokyo Tech., 2.Toyota Motor Coparation)

2:00 PM - 2:15 PM

△ [21p-B203-4] Structural and optical properties of oriented β-Ga₂O₃ thin films on oxide-buffered polymer substrates by excimer laser annealing

〇(M2)Ryoya Kai¹, Takumi Numata¹, Tomoaki Oga¹, Satoru Kaneko^2,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.KISTEC)

2:15 PM - 2:30 PM

△ [21p-B203-5] Epitaxial growth of δ-Ga₂O₃ using β-Fe₂O₃ buffer layers by mist CVD

〇Takahiro Kato¹, HIroyuki Nishinaka¹, Kazuki Shimazoe¹, Masahiro Yoshimoto¹, Kazutaka kanegae¹ (1.Kyoto Inst. Tech.)

2:30 PM - 2:45 PM

△ [21p-B203-6] Homoepitaxial growth of Ge-doped β-Ga₂O₃ thin films by mist CVD

〇Temma Ogawa¹, Hiroyuki Nishinaka¹, Kazuki Shimazoe¹, Kazutaka Kanegae¹, Masahiro Yoshimoto¹ (1.Kyokousen Univ.)

3:00 PM - 3:15 PM

△ [21p-B203-7] Evaluation Index of Buffer Layer for Single-Crystal ZnO Thin Films on Sapphire Substrates

〇Naoto Yamashita¹, Yuta Nakamura¹, Kunihiro Kamataki¹, Takamasa Okumura¹, Naho Itagaki¹, Kazunori Koga^1,2, Masaharu Shiratani¹ (1.Kyushu Univ., 2.NINS)

3:15 PM - 3:30 PM

△ [21p-B203-8] MgO-NiO-ZnO alloy semiconductor lattice-matched with MgO substrate

〇Shintarou Iida¹, Takumi Ikenoue¹, Masao Miyake¹, Tetsuji Hirato¹ (1.Kyoto Univ.)

3:30 PM - 3:45 PM

▼ [21p-B203-9] Dislocation Responsible for Leakage Current in HVPE (001) β-Ga₂O₃SBD Observed by Emission Microscopy and Synchrotron X-ray Topography

〇(D)Sayleap Sdoeung¹, Kohei Sasaki², Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK)

3:45 PM - 4:00 PM

△ [21p-B203-10] Single crystal growth of (InGaO₃)₁(ZnO)₂ by the pressurized Optical Floating Zone method and physical property

〇Tadahito Inoue¹, Kawamura Yusuke¹, Kase Naoki¹, Miyakawa Nobuaki¹ (1.Tokyo Univ of Scie.)

4:00 PM - 4:15 PM

△ [21p-B203-11] Polishing and etching damages of ZnO single crystals studied by time-resolved photoluminescence spectroscopy

〇Takumi Kasuya¹, Kohei Shima¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ.)

4:15 PM - 4:30 PM

△ [21p-B203-12] Modification of Electronic Structure and Defects of β-Ga₂O₃ Structure by Using (Ga_xIn_1-x)₂O₃ solid solution system

〇(M1C)Hao Cheng^1,2, Hoga Takeshi³, Ueda Shigenori², Ogura Atsushi^1,4, Chikyow Toyohiro², Nagata Takahiro^2,1 (1.Meiji Univ., 2.NIMS, 3.Tsuruoka Col., 4.MREL)

4:30 PM - 4:45 PM

▼ [21p-B203-13] Improved reliability of InGaZnO Thin Film Transistor
by Utilizing Low-temperature High-Pressure nitridation Treatment

〇(D)KuanJu Zhou¹, Keisuke Ide², TingChang Chang¹ (1.National Sun Yat-Sen Univ, 2.MSL Tokyo Tech)

5:00 PM - 5:15 PM

△ [21p-B203-14] Temperature-dependences of carrier concentration and Hall mobility in α-In₂O₃ films grown by mist CVD

〇Akito Taguchi¹, Takeyoshi Onuma¹, Ken Goto², Kentaro Kaneko³, Yoshinao Kumagai², Tohru Honda¹, Shizuo Fujita³, Tomohiro Yamaguchi¹ (1.Kogakuin Univ., 2.Tokyo Univ. Agric. and Tech., 3.Kyoto Univ.)

5:15 PM - 5:30 PM

△ [21p-B203-15] Establishment of A New Method for Fully Automated Ellipsometry Analyses of Transparent Conductive Oxides with Free Carrier Absorption

〇Yusuke Tani¹, Sara Maeda¹, Hirotaka Katayama², Daiji Kanematsu², Akira Terakawa², Hiroyuki Fujiwara¹ (1.Gifu Univ., 2.Panasonic)

5:30 PM - 5:45 PM

△ [21p-B203-16] Epitaxial growth of rh-IMO thin films on c-plane sapphire substrate by mist-CVD

〇Takayuki Ishino¹, Kazuki Shimazoe¹, Kazutaka Kanegae¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

5:45 PM - 6:00 PM

▼ [21p-B203-17] Fabrication of conductive anatase Ti_1−xNb_xO₂ thin films by mist chemical vapor deposition

〇(D)Han XU¹, Tomohito Sudare¹, Yumie Miura¹, Ryo Nakayama¹, Ryota Shimizu¹, Naoomi Yamada², Kentaro Kaneko³, Taro Hitosugi^1,4 (1.Tokyo Tech., 2.Chubu Univ., 3.Kyoto Univ, 4.Univ. Tokyo)

6:00 PM - 6:15 PM

△ [21p-B203-18] Fabrication of high-mobility In₂O₃-TFT using Atomic layer deposition

〇Yuuto Kawato¹, Takanori Takahashi¹, Mutsunori Uenuma¹, Masaharu Kobayashi², Yukiharu Uraoka¹ (1.NAIST, 2.IIS, Univ. of Tokyo)

6:15 PM - 6:30 PM

△ [21p-B203-19] Amorphous Oxide Semiconductor Material toward 3D Integrated Devices

〇Takanori Takahashi¹, Mutsunori Uenuma¹, Masaharu Kobayashi², Yukiharu Uraoka¹ (1.NAIST, 2.Univ. of Tokyo)

6:30 PM - 6:45 PM

▼ [21p-B203-20] Electric Field Thermopower Modulation of High-mobility InSnZnO_x TFTs

〇(D)Hui Yang^1,2, Yuqiao Zhang³, Yasutaka Matsuo¹, Hiromichi Ohta¹ (1.RIES-Hokkaido Univ., 2.Beijing Jiaotong Univ., 3.Jiangsu Univ.)

Sessions

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-B203-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [20p-B203-1] Impact of Au surfactant on composition and optical properties of gallium oxysulfide films

▲ [20p-B203-10] Investigation of Capacitance–Voltage Characteristics of p-Si/n-Ga2O3 Heterostructures Fabricated by Surface-Activated Bonding

[21a-B203-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [21p-B203-1] Heteroepitaxial growth of β-(AlxGa1-x)2O3/β-(InxGa1-x)2O3/β-Ga2O3 thin films via mist CVD

△ [21p-B203-2] Time-of-flight mass spectrometric study of metalorganic vapor phase epitaxy process of β-Ga2O3

△ [21p-B203-3] Epitaxial growth of β-Ga2O3 thin films with in-plane compressive strain

△ [21p-B203-4] Structural and optical properties of oriented β-Ga2O3 thin films on oxide-buffered polymer substrates by excimer laser annealing

△ [21p-B203-5] Epitaxial growth of δ-Ga2O3 using β-Fe2O3 buffer layers by mist CVD

△ [21p-B203-6] Homoepitaxial growth of Ge-doped β-Ga2O3 thin films by mist CVD

△ [21p-B203-7] Evaluation Index of Buffer Layer for Single-Crystal ZnO Thin Films on Sapphire Substrates

△ [21p-B203-8] MgO-NiO-ZnO alloy semiconductor lattice-matched with MgO substrate

▼ [21p-B203-9] Dislocation Responsible for Leakage Current in HVPE (001) β-Ga2O3 SBD Observed by Emission Microscopy and Synchrotron X-ray Topography

△ [21p-B203-10] Single crystal growth of (InGaO3)1(ZnO)2 by the pressurized Optical Floating Zone method and physical property

△ [21p-B203-11] Polishing and etching damages of ZnO single crystals studied by time-resolved photoluminescence spectroscopy

△ [21p-B203-12] Modification of Electronic Structure and Defects of β-Ga2O3 Structure by Using (GaxIn1-x)2O3 solid solution system

▼ [21p-B203-13] Improved reliability of InGaZnO Thin Film Transistorby Utilizing Low-temperature High-Pressure nitridation Treatment

△ [21p-B203-14] Temperature-dependences of carrier concentration and Hall mobility in α-In2O3 films grown by mist CVD

△ [21p-B203-15] Establishment of A New Method for Fully Automated Ellipsometry Analyses of Transparent Conductive Oxides with Free Carrier Absorption

△ [21p-B203-16] Epitaxial growth of rh-IMO thin films on c-plane sapphire substrate by mist-CVD

▼ [21p-B203-17] Fabrication of conductive anatase Ti1−xNbxO2 thin films by mist chemical vapor deposition

△ [21p-B203-18] Fabrication of high-mobility In2O3-TFT using Atomic layer deposition

△ [21p-B203-19] Amorphous Oxide Semiconductor Material toward 3D Integrated Devices

▼ [21p-B203-20] Electric Field Thermopower Modulation of High-mobility InSnZnOx TFTs

Authenticate

▲ [20p-B203-10] Investigation of Capacitance–Voltage Characteristics of p-Si/n-Ga₂O₃ Heterostructures Fabricated by Surface-Activated Bonding

△ [21p-B203-1] Heteroepitaxial growth of β-(Al_xGa_1-x)₂O₃/β-(In_xGa_1-x)₂O₃/β-Ga₂O₃ thin films via mist CVD

△ [21p-B203-2] Time-of-flight mass spectrometric study of metalorganic vapor phase epitaxy process of β-Ga₂O₃

△ [21p-B203-3] Epitaxial growth of β-Ga₂O₃ thin films with in-plane compressive strain

△ [21p-B203-4] Structural and optical properties of oriented β-Ga₂O₃ thin films on oxide-buffered polymer substrates by excimer laser annealing

△ [21p-B203-5] Epitaxial growth of δ-Ga₂O₃ using β-Fe₂O₃ buffer layers by mist CVD

△ [21p-B203-6] Homoepitaxial growth of Ge-doped β-Ga₂O₃ thin films by mist CVD

▼ [21p-B203-9] Dislocation Responsible for Leakage Current in HVPE (001) β-Ga₂O₃SBD Observed by Emission Microscopy and Synchrotron X-ray Topography

△ [21p-B203-10] Single crystal growth of (InGaO₃)₁(ZnO)₂ by the pressurized Optical Floating Zone method and physical property

△ [21p-B203-12] Modification of Electronic Structure and Defects of β-Ga₂O₃ Structure by Using (Ga_xIn_1-x)₂O₃ solid solution system

▼ [21p-B203-13] Improved reliability of InGaZnO Thin Film Transistor
by Utilizing Low-temperature High-Pressure nitridation Treatment

△ [21p-B203-14] Temperature-dependences of carrier concentration and Hall mobility in α-In₂O₃ films grown by mist CVD

▼ [21p-B203-17] Fabrication of conductive anatase Ti_1−xNb_xO₂ thin films by mist chemical vapor deposition

△ [21p-B203-18] Fabrication of high-mobility In₂O₃-TFT using Atomic layer deposition

▼ [21p-B203-20] Electric Field Thermopower Modulation of High-mobility InSnZnO_x TFTs