Oral presentation

[22a-E203-1~11] 17.3 Layered materials

Tue. Mar 22, 2022 9:00 AM - 12:00 PM E203 (E203)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[22a-E203-1] Visualization of a h-BN monolayer using an ultra-thin gold film

〇Yoshiaki Hattori¹, Takashi Taniguchi², Kenji Watanabe², Masatoshi Kitamura¹ (1.Kobe Univ., 2.NIMS)

9:15 AM - 9:30 AM

▲ [22a-E203-2] High temperature stability of MoS₂ probed by combining thermal desorption spectroscopy and atomic layer deposition

〇Li Shuhong^1,2, Tomonori Nishimura², Mina Maruyama¹, Susumu Okada¹, Kosuke Nagashio² (1.Univ. of Tsukuba, 2.Univ. of Tokyo)

9:30 AM - 9:45 AM

[22a-E203-3] Resonant tunneling effect utilizing subband quantization in a conduction band of 4-layer WSe₂

〇Kei Kinoshita¹, Rai Moriya¹, Shota Okazaki², Yijin Zhang¹, Satoru Masubuchi¹, Kenji Watanabe³, Takashi Taniguchi^3,1, Takao Sasagawa², Tomoki Machida^1,4 (1.IIS Univ. Tokyo, 2.MSL Tokyo Tech., 3.NIMS, 4.CREST-JST)

9:45 AM - 10:00 AM

[22a-E203-4] Electromechanical properties of hBN/1L-MoS₂ nanomechanical resonators

〇Kento Calvin Chiba¹, Kentaro Sawano¹, Kenji Watanabe², Takashi Taniguchi², Hiroyuki Fujita¹, Yusuke Hoshi¹ (1.Tokyo City Univ., 2.NIMS)

10:00 AM - 10:15 AM

[22a-E203-5] The Property of MoS₂-FET Under flowing Alcohol Fluids

〇Tsuyoshi Takaoka¹, Kosei Takahashi², Hiroki Waizumi², Nasir Uddin², Yasuyuki Sainoo¹, Atsushi Ando³, Tadahiro Komeda¹ (1.IMRAM, Tohoku Univ., 2.Sci, Tohoku Univ., 3.AIST)

10:30 AM - 10:45 AM

▼ [22a-E203-6] Characterization of single-crystalline carbon-doped h-BN/metal contact for current injection

〇Supawan Ngamprapawat¹, Tomonori Nishimura¹, Kenji Watanabe², Takashi Taniguchi², Kosuke Nagashio¹ (1.Univ. Tokyo, 2.NIMS)

10:45 AM - 11:00 AM

▼ [22a-E203-7] Excitonic properties of high-quality CVD-grown Janus WSSe

〇(P)Ufuk Erkilic¹, Shengnan Wang¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Lab.)

11:00 AM - 11:15 AM

[22a-E203-8] Determination of band gap value and photoresponse mechanism of bulk PdSe₂ by photocurrent measurements

〇Wataru Nishiyama¹, Tomonori Nishimura¹, Masao Nishioka¹, Keiji Ueno², Satoshi Iwamoto¹, Kosuke Nagashio¹ (1.Univ. Tokyo, 2.Saitama Univ.)

11:15 AM - 11:30 AM

[22a-E203-9] Photoconductive effect of GaSSe alloys

〇Shinya Nakakura¹, Noriyuki Urakami^1,2, Yoshio Hashimoto^1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)

11:30 AM - 11:45 AM

△ [22a-E203-10] Optical properties due to a few moiré excitons in nanofabricated MoSe₂/WSe₂ heterobilayers

〇Yuki Okamura¹, Keisuke Shinokita¹, Kenji Watanabe², Takashi Taniguchi², Kazunari Matsuda¹ (1.IAE, Kyoto Univ., 2.NIMS)

11:45 AM - 12:00 PM

[22a-E203-11] Extraordinary optical transmission by hyperbolic phonon-plasmon polaritons using hexagonal-boron nitride in plasmonic nanoslits

〇Shinpei Ogawa¹, Shoichiro Fukushima¹, Masaaki Shimatani¹ (1.Mitsubishi Electric Corp.)

Oral presentation

[23a-E101-1~11] 17.3 Layered materials

Wed. Mar 23, 2022 9:00 AM - 12:00 PM E101 (E101)

Akinobu Kanda(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[23a-E101-1] [The 51st Young Scientist Presentation Award Speech] Physical origin of the ultrafast nature in 2D heterostructured memory devices

〇Taro Sasaki¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.Saitama Univ., 3.NIMS)

9:15 AM - 9:30 AM

[23a-E101-2] Fabrication Process for Nanoscale Monolayer WTe₂ Devices

〇Masayuki Hosoda^1,2, Russell S. Deacon¹, Michael D. Randle¹, Shota Okazaki³, Takao Sasagawa³, Takashi Taniguchi⁴, Kenji Watanabe⁴, Manabu Ohtomo², Kenichi Kawaguchi², Yoshiyasu Doi², Shintaro Sato², Koji Ishibashi¹ (1.RIKEN, 2.Fujitsu, 3.Tokyo Tech, 4.NIMS)

9:30 AM - 9:45 AM

[23a-E101-3] Aluminum-scandium alloy for S/D contacts to fabricate WSe₂ nFET

〇Ryosuke Kajikawa¹, Takamasa Kawanago², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech, 2.Tokyo Tech FIRST)

9:45 AM - 10:00 AM

[23a-E101-4] p-type operation of n-type WSe₂FET by controlling Schottky barrier

〇Ryoichi Kato¹, Tomonori Nishimura¹, Keiji Ueno², Hisashi Tanigughi³, Kenji Watanabe³, Kosuke Nagashio¹ (1.Tokyo Univ., 2.Saitama Univ., 3.NIMS)

10:00 AM - 10:15 AM

[23a-E101-5] Work function modulation of Au/Bi film toward p-type operation of WSe₂

〇(M1)Ryuichi Nakajima¹, Tomonori Nishimura¹, Keiji Ueno², Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.Saitama Univ.)

10:30 AM - 10:45 AM

▼ [23a-E101-6] Carrier transport in 2D WS2-xSex FETs

〇(D)Abdul A Kuddus¹, Rytaro Kizaki¹, Kojun Yokoyama¹, Hajime Shirai¹ (1.Saitama University)

10:45 AM - 11:00 AM

[23a-E101-7] EL intensity dependence of carrier density in lateral PN junction induced in 3L-MoTe₂

〇Kairi Yamase¹, Kenji Watanabe², Takashi Taniguchi², Yusuke Hoshi¹ (1.Tokyo City Univ., 2.NIMS)

11:00 AM - 11:15 AM

△ [23a-E101-8] Fabrication and electronic transport properties of multilayer Nb_xMo_1-xS₂/MoS₂ in-plane heterostructures

〇(DC)Hiroto Ogura¹, Seiya Kawasaki¹, Zheng Liu², Takahiko Endo¹, Yusuke Nakanishi¹, Hong En Lim¹, Toshifumi Irisawa², Kosuke Nagashio³, Yasumitsu Miyata¹ (1.TMU, 2.AIST, 3.The Univ. of Tokyo)

11:15 AM - 11:30 AM

[23a-E101-9] Effect of thermal anneal on the electrical properties of MoTe₂/hBN structures

〇Yuma Odagiri¹, Kenji Watanabe², Takashi Taniguchi², Yusuke Hoshi¹ (1.Tokyo City Univ., 2.NIMS)

11:30 AM - 11:45 AM

[23a-E101-10] Fabrication and characterization of 2 D material photodetector for image sensor device

〇Yoshinori Nakagawa¹, Masahiko Sano¹, Shigeki Okauchi¹, Takashi Mukai¹, Yasuhide Ohno², Masao Nagase² (1.Nichia Corp., 2.Tokushima Univ.)

11:45 AM - 12:00 PM

[23a-E101-11] [Highlight]2D Material Field-Effect Transistors with High-k Top Gate Oxide toward 1-nm EOT

〇Haruki Uchiyama¹, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.The Univ. of Tokyo)

Oral presentation

[24a-E102-1~10] 17.3 Layered materials

Thu. Mar 24, 2022 9:00 AM - 11:45 AM E102 (E102)

Masaki Nakano(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[24a-E102-1] [The 51st Young Scientist Presentation Award Speech] Non-Classical Nucleation of Monolayer WS₂ revealed by In-situ Monitoring CVD

〇Yuta Iwamoto¹, Xiaoming Qiang¹, Toshiro Kaneko¹, Toshiaki Kato¹ (1.Tohoku Univ.)

9:15 AM - 9:30 AM

▼ [24a-E102-2] Epitaxial Growth of MoS₂ on Sapphire (c-Al₂O₃) by MOCVD

〇(D)Myeongok Kim^1,2, Nazmul Ahsan², Nicholas Trainor³, Chen Chen³, Dorota Kowalczyk⁴, Joan Redwing³, Yoshitaka Okada^1,2 (1.Eng. UTokyo, 2.RCAST UTokyo, 3.Penn. State Univ., 4.Lodz Univ.)

9:30 AM - 9:45 AM

△ [24a-E102-3] Low temperature metal-organic chemical vapor deposition of WS₂ using n-BuNC-W(CO)₅ as a W precursor

〇Kirito Cho¹, Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudoh³, Hitoshi Wakabayashi⁴, Ryo Yokogawa^1,2, Nanomi Sawamoto^1,2, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Gas-phase Growth Ltd., 4.Tokyo Tech Univ.)

9:45 AM - 10:00 AM

[24a-E102-4] The fabrication and properties of MoS2 thin film by mist CVD

〇Kanta Asako¹, Miyabi Fukue¹, Tatsuya Yasuoka¹, Li Liu^1,2, Toshiyuki Kawaharamura^1,2 (1.Sys. Eng, Kochi Univ. of Tech., 2.Res. Inst., Kochi Univ. of Tech.)

10:00 AM - 10:15 AM

[24a-E102-5] Synthesis and Thin Film Formation of WS₂ by Simple Thermal CVD Method

〇Fumitaka Ohashi¹, Kazuma Shirai², Shunsuke Sugai², Kazushi Sekiya¹, Kumar Rahul¹, Himanshu Jha¹, Tetesuji Kume^1,2 (1.Gifu Univ., 2.Graduate School, Gifu Univ.)

10:15 AM - 10:30 AM

△ [24a-E102-6] Zr_xHf_1-xS₂ Alloy Film Formation by RF Magnetron Sputtering Co-deposition

〇Shusei Hanafusa¹, Yusuke Hibino^2,4, Ryo Yokogawa^1,4, Hitoshi Wakabayashi³, Atsushi Ogura^1,4 (1.Meiji Univ., 2.Sasebo College., 3.Tokyo Tech., 4.MREL)

10:45 AM - 11:00 AM

[24a-E102-7] Transport properties of MTe₂(M=Co,Ni) epitaxial thin films

〇(M2)Kyoka Hamamoto¹, Yumiko Katayama¹, Kobayashi Tomoki¹, Shikama Naoki¹, Nabeshima Fuyuki¹, Maeda Atsutaka¹, Ueno Kazunori¹ (1.Tokyo Univ.)

11:00 AM - 11:15 AM

[24a-E102-8] Synthesis and properties of Mo chalcogenides thin films by vapor phase processing of CaMoO₄

Itsuki Naito¹, Seiya Yokokura¹, Taro Nagahama¹, 〇Toshihiro Shimada¹ (1.Hokkaido Univ.)

11:15 AM - 11:30 AM

▲ [24a-E102-9] Synthesis of relatively small-diameter WS₂ nanotubes by sulfurization of poly(ethylene glycol) treated thin tungsten oxide nanowires

〇MD ASHIQUR RAHMAN^1,2, Yohei Yomogida¹, Mai Nagano¹, Ryoga Tanaka¹, Kazuhiro Yanagi¹ (1.Tokyo Metro. Univ., 2.Comilla Univ.)

11:30 AM - 11:45 AM

[24a-E102-10] Self-limiting-grown Tungsten Disulfide Nanoribbons on Tungsten Oxide Nanowires

〇Hiroo Suzuki¹, Misaki Kishibuchi¹, Soya Ochiai¹, Zheng Liu², Yasumitsu Miyata³, Yasuhiko Hayashi¹ (1.Okayama Univ., 2.AIST, 3.Tokyo Metropolitan Univ.)

Oral presentation

[25a-E102-1~5] 17.3 Layered materials

Fri. Mar 25, 2022 9:45 AM - 11:00 AM E102 (E102)

Hiroki Hibino(Kwansei Gakuin Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:45 AM - 10:00 AM

[25a-E102-1] Thermoelectric power factor enhancement by introducing metastable phase into bulk CaSi₂

〇Tsukasa Terada¹, Takafumi Ishibe¹, Tien Quang Nguyen², Kazunori Sato², Yoshiaki Nakamura¹ (1.Grad. School of Eng. Sci., 2.Grad. School of Eng.)

10:00 AM - 10:15 AM

[25a-E102-2] Fabrication of silicene with deformed buckled structure by manipulating Ca intercalation and its thermoelectric properties

〇Mikio Kojima¹, Tsukasa Terada¹, Takafumi Ishibe¹, Nobuyasu Naruse², Eiichi Kobayashi³, Yoshiaki Nakamura¹ (1.Grad. School of Eng. Sci., 2.Shiga Univ. of Medical Science, 3.Kyusyu Synchrotron Light Research Center)

10:15 AM - 10:30 AM

[25a-E102-3] Antiferromagnetic phase transition and magnetoresistance in magnetic intercalation compounds Fe_0.33NbS₂

〇(M2)Yuanxin YE¹, Mikio Koyano¹, Masanobu Miyata¹ (1.JAIST)

10:30 AM - 10:45 AM

[25a-E102-4] Controlling magnetic properties of Cr₃Te₄ by ion gating

〇Shun Kajihara¹, Hideki Matsuoka², Yue Wang¹, Masaki Nakano^1,2,3, Yoshihiro Iwasa^1,2 (1.The Univ. of Tokyo, 2.RIKEN CEMS, 3.JST-PRESTO)

10:45 AM - 11:00 AM

[25a-E102-5] Fabrication of arsenic-based layered IV-V compounds

〇Shu Kagami¹, Yuichiro Suzuki¹, Noriyuki Urakami^1,2, Yoshio Hashimoto^1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)

Sessions

17 Nanocarbon Technology » 17.3 Layered materials

[22a-E203-1~11] 17.3 Layered materials

▲ [22a-E203-2] High temperature stability of MoS2 probed by combining thermal desorption spectroscopy and atomic layer deposition

▼ [22a-E203-6] Characterization of single-crystalline carbon-doped h-BN/metal contact for current injection

▼ [22a-E203-7] Excitonic properties of high-quality CVD-grown Janus WSSe

△ [22a-E203-10] Optical properties due to a few moiré excitons in nanofabricated MoSe2/WSe2 heterobilayers

[23a-E101-1~11] 17.3 Layered materials

▼ [23a-E101-6] Carrier transport in 2D WS2-xSex FETs

△ [23a-E101-8] Fabrication and electronic transport properties of multilayer NbxMo1-xS2/MoS2 in-plane heterostructures

[24a-E102-1~10] 17.3 Layered materials

▼ [24a-E102-2] Epitaxial Growth of MoS2 on Sapphire (c-Al2O3) by MOCVD

△ [24a-E102-3] Low temperature metal-organic chemical vapor deposition of WS2 using n-BuNC-W(CO)5 as a W precursor

△ [24a-E102-6] ZrxHf1-xS2 Alloy Film Formation by RF Magnetron Sputtering Co-deposition

▲ [24a-E102-9] Synthesis of relatively small-diameter WS2 nanotubes by sulfurization of poly(ethylene glycol) treated thin tungsten oxide nanowires

[25a-E102-1~5] 17.3 Layered materials

Authenticate

▲ [22a-E203-2] High temperature stability of MoS₂ probed by combining thermal desorption spectroscopy and atomic layer deposition

△ [22a-E203-10] Optical properties due to a few moiré excitons in nanofabricated MoSe₂/WSe₂ heterobilayers

△ [23a-E101-8] Fabrication and electronic transport properties of multilayer Nb_xMo_1-xS₂/MoS₂ in-plane heterostructures

▼ [24a-E102-2] Epitaxial Growth of MoS₂ on Sapphire (c-Al₂O₃) by MOCVD

△ [24a-E102-3] Low temperature metal-organic chemical vapor deposition of WS₂ using n-BuNC-W(CO)₅ as a W precursor

△ [24a-E102-6] Zr_xHf_1-xS₂ Alloy Film Formation by RF Magnetron Sputtering Co-deposition

▲ [24a-E102-9] Synthesis of relatively small-diameter WS₂ nanotubes by sulfurization of poly(ethylene glycol) treated thin tungsten oxide nanowires