Poster presentation

[15p-PA04-1~3] 13.3 Insulator technology

Wed. Mar 15, 2023 4:00 PM - 6:00 PM PA04 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[15p-PA04-1] Charge trapping characteristics of manganese-doped and vanadium-dope silicon nitride films

〇Daiki Morohoshi¹, Akari Matsumoto¹, Yuta Nishigaki¹, Tomoya Satonaka², Yuto Ito², Yuki Arakawa², Takumi Abe², Kiyoteru Kobayashi^1,2 (1.Tokai Univ. Grad. Sch. Eng., 2.Tokai Univ. Sch. Eng.)

4:00 PM - 6:00 PM

[15p-PA04-2] Deposition temperature dependence of amount of residual OH groups in low-temperature Si oxide films after in-situ post-deposition heating

〇Di Pu¹, Susumu Horita¹ (1.JAIST)

4:00 PM - 6:00 PM

[15p-PA04-3] Formation energy at a stable site for diatomic molecules in Si₃N₄ and SiO₂ films

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

Oral presentation

[16p-B508-1~17] 13.3 Insulator technology

Thu. Mar 16, 2023 1:00 PM - 5:45 PM B508 (Building No. 2)

Noriyuki Taoka(Nagoya Univ.), Yoshiki Yamamoto(Renesas Electronics)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:30 PM

[16p-B508-1] [The 44th Paper Award Speech] Acceleration of Ferroelectric Phase Formation in HfO₂-ZrO₂ Nanolaminate Structures

〇Shinji Migita¹, Hiroyuki Ota¹, Shutaro Asanuma¹, Yukinori Morita¹, Akira Toriumi² (1.AIST, 2.Univ. Tokyo)

1:30 PM - 1:45 PM

[16p-B508-2] Change of Carrier Transport Property and Emersion of Ferroelectricity on Pristine Hf_0.5Zr_0.5O₂ Thin Films by Applying Initial Electric Field

〇Yukinori Morita¹, Takashi Onaya², Shutaro Asanuma¹, Hiroyuki Ota¹, Shinji Migita¹ (1.AIST, 2.The Univ. of Tokyo)

1:45 PM - 2:00 PM

[16p-B508-3] Origin of oxygen vacancy formation originating from ferroelectric Hf_xZr_1−xO₂/TiN interface reaction in fatigued state

〇Takashi Onaya^1,2,3,4, Takahiro Nagata², Toshihide Nabatame², Yoshiyuki Yamashita², Kazuhito Tsukagoshi², Yukinori Morita³, Hiroyuki Ota³, Shinji Migita³, Koji Kita¹ (1.The Univ. of Tokyo, 2.NIMS, 3.AIST, 4.JSPS Research Fellow PD)

2:00 PM - 2:15 PM

[16p-B508-4] Demonstration of remnant polarization enhancement in HfO₂ thin films induced by polarization switching under mechanical tensile strain

〇Tatsuya Inoue¹, Takashi Onaya², Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.School of Frontier Sci., The Univ. of Tokyo)

2:15 PM - 2:30 PM

[16p-B508-5] Stabilization of ferroelectric phase in HfO₂ thin films by applying mechanical strain during annealing process

〇Hiroshi Yasuda¹, Takashi Onaya², Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.Graduate School of Frontier Sci., The Univ. of Tokyo)

2:30 PM - 2:45 PM

[16p-B508-6] Frequency dependence of wakeup characteristics in 3.6-nm-thick ultrathin Hf_0.5Zr_0.5O₂ferroelectrics

〇Makoto Kawano¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo, Faculty of Engineering)

2:45 PM - 3:00 PM

[16p-B508-7] Origin of negative capacitance in ferroelectric capacitor with dielectric capacitor (2)

〇Akira Toriumi¹, Shinji Migita² (1.Free engineer, 2.AIST)

3:00 PM - 3:15 PM

[16p-B508-8] Origin of negative capacitance in ferroelectric capacitor with a resistor

〇Akira Toriumi¹, Shinji Migita² (1.Free engineer, 2.AIST)

3:30 PM - 3:45 PM

△ [16p-B508-9] Verification of stacking sequence control effect by monatomic layer insertion into perovskite oxide epitaxial interfaces

〇Atsushi Tamura¹, Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.School of Frontier Sci., The Univ. of Tokyo)

3:45 PM - 4:00 PM

△ [16p-B508-10] Investigation of InGaAs interface trap density reduction mechanism by low temperature deposition Al₂O₃

〇Keigo Nakamura¹, Ryoji Arai¹, Yusuke Ohtsuka¹, Ryosuke Matsumoto¹, Itaru Oshiyama¹, Shinichi Yoshida¹, Tomoyuki Hirano¹, Hayato Iwamoto¹ (1.Sony Semiconductor Solutions)

4:00 PM - 4:15 PM

△ [16p-B508-11] Analysis of InGaAs interface state reduction by deoisition of plasma ALD PO_x

〇Yusuke Ohtsuka¹, Keigo Nakamura¹, Ryoji Arai¹, Ryosuke Matsumoto¹, Itaru Oshiyama¹, Shinichi Yoshida¹, Tomoyuki Hirano¹, Hayato Iwamoto¹ (1.Sony Semiconductor Solutions)

4:15 PM - 4:30 PM

△ [16p-B508-12] New index of local atomic structure in amorphous materials for ELNES spectrum interpretation

〇Yusuke Yuzawa¹, Takanori Asano¹, Hiroki Kawai¹, Kenji Nakamura¹, Daisuke Hagishima¹, Hiroki Tanaka¹ (1.KIOXIA Corp.)

4:30 PM - 4:45 PM

[16p-B508-13] Characterization of the multiple thin dielectric films in depth direction

〇Yusaku Tanahashi¹, Keiko Inoue¹, Hirofumi Seki¹ (1.Toray Research Center)

4:45 PM - 5:00 PM

[16p-B508-14] First-principles Study on Silicon Emission from Interface into Oxide

〇Hiroyuki Kageshima¹, Toru Akiyama², Kenji Shiraishi³ (1.Shimane Univ., 2.Mie Univ., 3.Nagoya Univ.)

5:00 PM - 5:15 PM

[16p-B508-15] Effects of thermal annealing on the charge trapping characteristics of silicon nitride films for nonvolatile memory applications

〇Zuhao Wang¹, Kenshi Kimoto³, Soichiro Nakagawa¹, Mitsuhiro Sashida², Kento Nakamura², Fumiya Fujino², Kunimitsu Maejima³, Kiyoteru Kobayshi^1,2 (1.Tokai Univ., Gra. Sch. Eng., 2.Tokai Univ., Sch. Eng., 3.ESCO, Ltd.)

5:15 PM - 5:30 PM

[16p-B508-16] Preparation and evaluation of GeO₂film by two-step oxidation

〇(M1)Hajime Saito¹, Yuta Tsuchiya¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

5:30 PM - 5:45 PM

[16p-B508-17] Electrical Properties of Al₂O₃ Thin Films Deposited on p-type Ge Substrates at Low Temperatures

Tatsuya Yokohira¹, Daichi Yamada¹, Atsuki Okawa², Tetsuya Sato², 〇Yohei Otani¹ (1.Suwa Univ. of Sci., 2.Univ. of Yamanashi)

Sessions

13 Semiconductors » 13.3 Insulator technology

[15p-PA04-1~3] 13.3 Insulator technology

[15p-PA04-1] Charge trapping characteristics of manganese-doped and vanadium-dope silicon nitride films

[15p-PA04-2] Deposition temperature dependence of amount of residual OH groups in low-temperature Si oxide films after in-situ post-deposition heating

[15p-PA04-3] Formation energy at a stable site for diatomic molecules in Si₃N₄ and SiO₂ films

[16p-B508-1~17] 13.3 Insulator technology

[16p-B508-1] [The 44th Paper Award Speech] Acceleration of Ferroelectric Phase Formation in HfO₂-ZrO₂ Nanolaminate Structures

[16p-B508-2] Change of Carrier Transport Property and Emersion of Ferroelectricity on Pristine Hf_0.5Zr_0.5O₂ Thin Films by Applying Initial Electric Field

[16p-B508-3] Origin of oxygen vacancy formation originating from ferroelectric Hf_xZr_1−xO₂/TiN interface reaction in fatigued state

[16p-B508-4] Demonstration of remnant polarization enhancement in HfO₂ thin films induced by polarization switching under mechanical tensile strain

[16p-B508-5] Stabilization of ferroelectric phase in HfO₂ thin films by applying mechanical strain during annealing process

[16p-B508-6] Frequency dependence of wakeup characteristics in 3.6-nm-thick ultrathin Hf_0.5Zr_0.5O₂ferroelectrics

[16p-B508-7] Origin of negative capacitance in ferroelectric capacitor with dielectric capacitor (2)

[16p-B508-8] Origin of negative capacitance in ferroelectric capacitor with a resistor

△ [16p-B508-9] Verification of stacking sequence control effect by monatomic layer insertion into perovskite oxide epitaxial interfaces

△ [16p-B508-10] Investigation of InGaAs interface trap density reduction mechanism by low temperature deposition Al₂O₃

△ [16p-B508-11] Analysis of InGaAs interface state reduction by deoisition of plasma ALD PO_x

△ [16p-B508-12] New index of local atomic structure in amorphous materials for ELNES spectrum interpretation

[16p-B508-13] Characterization of the multiple thin dielectric films in depth direction

[16p-B508-14] First-principles Study on Silicon Emission from Interface into Oxide

[16p-B508-15] Effects of thermal annealing on the charge trapping characteristics of silicon nitride films for nonvolatile memory applications

[16p-B508-16] Preparation and evaluation of GeO₂film by two-step oxidation

[16p-B508-17] Electrical Properties of Al₂O₃ Thin Films Deposited on p-type Ge Substrates at Low Temperatures

Authenticate

Sessions

13 Semiconductors » 13.3 Insulator technology

[15p-PA04-1~3] 13.3 Insulator technology

[16p-B508-1~17] 13.3 Insulator technology

△ [16p-B508-9] Verification of stacking sequence control effect by monatomic layer insertion into perovskite oxide epitaxial interfaces

△ [16p-B508-10] Investigation of InGaAs interface trap density reduction mechanism by low temperature deposition Al2O3

△ [16p-B508-11] Analysis of InGaAs interface state reduction by deoisition of plasma ALD POx

△ [16p-B508-12] New index of local atomic structure in amorphous materials for ELNES spectrum interpretation

Authenticate

△ [16p-B508-10] Investigation of InGaAs interface trap density reduction mechanism by low temperature deposition Al₂O₃

△ [16p-B508-11] Analysis of InGaAs interface state reduction by deoisition of plasma ALD PO_x