[2Ca07-13] TF/SE/EMP/MI/MS

[2Ca10S] Characterization of mist chemical vapor deposited Al₂O₃ thin films and its applications in GaN-based MIS-HEMTs

*Tomohiro Motoyama¹, Ali Baratov², Rui Shan Low², Shun Urano², Yusui Nakamura³, Masaaki Kuzuhara⁴, Joel T. Asubar², Zenji Yatabe³ (1. Graduate School of Science and Technology, Kumamoto University, 2. Graduate School of Engineering, University of Fukui, 3. Faculty of Advanced Science and Technology, Kumamoto University, 4. School of Engineering, Kwansei Gakuin University)

Al₂O₃ thin films, as an attractive candidate for insulated gate for GaN-based metal-insulator-semiconductor (MIS) structures, were synthesized by cost-effective mist chemical vapor deposition (CVD) technique. The properties of deposited Al₂O₃ thin films are comparable to those reported from high-quality amorphous Al₂O₃ thin films deposited by atomic layer deposition method. In addition, we fabricated AlGaN/GaN MIS diodes using Al₂O₃ gate insulator mist-CVD technique. Capacitance–voltage investigations indicated high quality of the resulting mist-Al₂O₃/AlGaN interfaces.