[2Fa03-07] SS1

[2Fa06] Evolution of atomic and electronic structure of double-layer In by Mg deposition

*Shigemi Terakawa¹, Shinichiro Hatta¹, Hiroshi Okuyama¹, Tetsuya Aruga¹ (1. Graduate School of Science, Kyoto University)

We have studied the evolution of atomic and electronic structure of the doble-layer indium on Si(111) induced by Mg deposition using LEED, STM and ARPES. We found that two new phases, (2√3×2√3) (Mg coverage 0.2 ML) and (√3×√3) (1 ML), are formed. Both phases have 2D nearly-free-electron band structures. The band structure of the (√3×√3) phase is reproduced by three-atomic-layer models.