[2P01-37] Poster

[2P02S] Electronic structure of Cu(001)c(4×2)-Bi surface

*Nanao Morii¹, Kei Nagatomo¹, Koichi Takemura¹, Takumi Ouchi¹, Hitomi Uryu¹, Shunsuke Nagao¹, Rio Kawazoe¹, Takushi Iimori², Fumio Komori¹, Hiroyuki Hirayama³, Kan Nakatsuji¹ (1. Department of Materials Science and Engineering, Tokyo Institute of Technology, 2. Institute for Solid State Physics, University of Tokyo, 3. Department of Physics, Tokyo Institute of Technology)

Bismuth ultra-thin films grown on metal surfaces often have spin-split electronic band structure due to Rashba effect. Bi is a heavy element with strong spin-orbit coupling which give rise to the Rashba effect. Previous investigations of Bi/Cu(001) system in sub-monolayer (ML) regime reported that the 1x1 structure at 0.25 ML changes to c(4×2) below 250 K. In the present study, the electronic structure of Cu(001)c(4×2)-Bi phase was investigated by angle-resolved photoelectron spectroscopy (ARPES). We discussed the change of clean Cu(001) surface states and some new surface states.