[3Da01-12] ASS

[3Da07S] SEM application of the graphene-oxide-semiconductor type planar electron source

*Yukino Kameda^1,2, Katsuhisa Murakami², Masayoshi Nagao², Hidenori Mimura¹, Yoichiro Neo¹ (1. Research Institute of Electronics Shizuoka University, 2. National Institute of Advanced Industrial Science and Technology)

Our study’s purpose is the development of novel, low cost, and high-performance SEM by using GOS type planar electron emission source for an electron gun. GOS device is based on a MOS type electron emission device using graphene instead of metal for a gate electrode. The GOS device has excellent features such as operation in low vacuum conditions, very small divergence angle of electron beams, and very high electron emission efficiency of over 30 %. Therefore, the GOS device would make the electron optics and vacuum system of SEM very simple. In this study, we installed the GOS device into the conventional SEM without condenser lenses and demonstrated the observation of the SEM image. The obtained image was very stable and without noise and its probe current is 6.5pA. In addition, we found the optimal structure of the electron optics for the electron beam divergence angle of approximately 0 degree by the simulation of the electron beam trajectory and this structure will make the SEM image higher resolution.