[A4-O3] Slot 03

[A4-O3-04] Precise analysis of segregation sites for As dopants at Si grain boundaries

*Yutaka Ohno¹, Tatsuya Yokoi², Yasuo Shimizu^1,5, Jie Ren¹, Koji Inoue¹, Yasuyoshi Nagai¹, Kentaro Kutsukake³, Kozo Fujiwara¹, Atsutomo Nakamura^2,4, Katsuyuki Matsunaga², Hideto Yoshida⁴ (1. Tohoku Univ. (Japan), 2. Nagoya Univ. (Japan), 3. RIKEN (Japan), 4. Osaka Univ. (Japan), 5. NIMS (Japan))

キーワード：Grain boundary segregation, atom probe tomography, ab initio calculation, silicon, arsenic