Materials Research Meeting 2021

講演情報

Poster Session

A. New Materials Methodology for Next-Generation » [A-4] New Methodology for Developing Innovative Materials

[A4-PR15] Slot 15

2021年12月14日(火) 18:30 〜 20:30 A4-PR15 (G403-404)

18:30 〜 20:30

[A4-PR15-02] High Jc K-doped BaFe2As2 epitaxial thin films grown on oxide substrates

*Dongyi Qin1, Kazumasa Iida2,6, Takafumi Hatano2,6, Hongye Gao3, Zimeng Guo4,6, Chao Wang3, Hikaru Saito5,6, Satoshi Hata3,6,4, Michio Naito1,6, Akiyasu Yamamoto1,6 (1. Department of Applied Physics, Tokyo Univ. of Agri. and Tech. (Japan), 2. Department of Materials Physics, Nagoya Univ. (Japan), 3. The Ultramicroscopy Res. Center, Kyushu Univ. (Japan), 4. Interdisciplinary Graduate School of Eng. Sci., Kyushu Univ. (Japan), 5. Inst. for Materials Chemistry and Eng., Kyushu Univ. (Japan), 6. JST CREST (Japan))

キーワード:Iron-based superconductor, BaFe2As2, potassium, epitaxial thin film, critical current density

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