Materials Research Meeting 2021

講演情報

印刷

Oral Session

D. Frontiers of Advanced Electronic Materials » [D-2] Frontier in Functional Oxides and Related Materials: from Materials Design to Device Applications

[D2-O10] Slot 10

2021年12月16日(木) 16:00 〜 18:00 Room A (G401)

Chair: Keisuke Ide (Tokyo Institute of Technology), Nobuto Oka (Kindai University, JAPAN)

16:25 〜 16:40

[D2-O10-02] Two-Step Current-Induced Transition in Ca2RuO4 Thin Films Observed in the Time-Resolved Resistive Switching Characteristics

*Keiji Tsubaki1, Atsushi Tsurumaki-Fukuchi1, Yasuo Takahashi1, Takayoshi Katase2, Toshio Kamiya2, Masashi Arita1 (1. IST, Hokkaido Univ. (Japan), 2. MSL, Tokyo Tech. (Japan))

キーワード：Current-induced transition, Metal-insulator transition, Ruthenium oxide, Resistive switching

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